The position dependence of nitrogen in BAC model with 10 band Hamiltonian: band mixing effects and gain in InGaNAs/GaAs quantum well lasers

YN Qiu, JM Rorison

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

An improved band anti-crossing model is presented in which the position of the nitrogen within the quantum well is included. This is found to strongly influence the conduction band levels, the dipole moments and gain
Translated title of the contributionThe position dependence of nitrogen in BAC model with 10 band Hamiltonian: band mixing effects and gain in InGaNAs/GaAs quantum well lasers
Original languageEnglish
Title of host publication2005 Quantum Electronics and Laser Science Conference (QELS), Baltimore, USA
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1038 - 1040
Number of pages3
Volume2
ISBN (Print)1557527962
DOIs
Publication statusPublished - 22 May 2005

Bibliographical note

Other: IEEE Cat. No. 05CH37696

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