The position dependence of nitrogen in BAC model with 10 band Hamiltonian: band mixing effects and gain in InGaNAs/GaAs quantum well lasers

YN Qiu; JM Rorison

doi:10.1109/QELS.2005.1549022

The position dependence of nitrogen in BAC model with 10 band Hamiltonian: band mixing effects and gain in InGaNAs/GaAs quantum well lasers

YN Qiu
, JM Rorison

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Abstract

An improved band anti-crossing model is presented in which the position of the nitrogen within the quantum well is included. This is found to strongly influence the conduction band levels, the dipole moments and gain

Translated title of the contribution	The position dependence of nitrogen in BAC model with 10 band Hamiltonian: band mixing effects and gain in InGaNAs/GaAs quantum well lasers
Original language	English
Title of host publication	2005 Quantum Electronics and Laser Science Conference (QELS), Baltimore, USA
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1038 - 1040
Number of pages	3
Volume	2
ISBN (Print)	1557527962
DOIs	https://doi.org/10.1109/QELS.2005.1549022
Publication status	Published - 22 May 2005

Bibliographical note

Other: IEEE Cat. No. 05CH37696

Research Groups and Themes

Photonics and Quantum

Access to Document

10.1109/QELS.2005.1549022

Handle.net

Persistent link

Cite this

Qiu, YN., & Rorison, JM. (2005). The position dependence of nitrogen in BAC model with 10 band Hamiltonian: band mixing effects and gain in InGaNAs/GaAs quantum well lasers. In 2005 Quantum Electronics and Laser Science Conference (QELS), Baltimore, USA (Vol. 2, pp. 1038 - 1040). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/QELS.2005.1549022

@inproceedings{9f415f4b082d44f4a199984a6a7fac16,

title = "The position dependence of nitrogen in BAC model with 10 band Hamiltonian: band mixing effects and gain in InGaNAs/GaAs quantum well lasers",

abstract = "An improved band anti-crossing model is presented in which the position of the nitrogen within the quantum well is included. This is found to strongly influence the conduction band levels, the dipole moments and gain",

author = "YN Qiu and JM Rorison",

note = "Other: IEEE Cat. No. 05CH37696",

year = "2005",

month = may,

day = "22",

doi = "10.1109/QELS.2005.1549022",

language = "English",

isbn = "1557527962",

volume = "2",

pages = "1038 -- 1040",

booktitle = "2005 Quantum Electronics and Laser Science Conference (QELS), Baltimore, USA",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

}

Qiu, YN & Rorison, JM 2005, The position dependence of nitrogen in BAC model with 10 band Hamiltonian: band mixing effects and gain in InGaNAs/GaAs quantum well lasers. in 2005 Quantum Electronics and Laser Science Conference (QELS), Baltimore, USA. vol. 2, Institute of Electrical and Electronics Engineers (IEEE), pp. 1038 - 1040. https://doi.org/10.1109/QELS.2005.1549022

The position dependence of nitrogen in BAC model with 10 band Hamiltonian: band mixing effects and gain in InGaNAs/GaAs quantum well lasers. / Qiu, YN; Rorison, JM.
2005 Quantum Electronics and Laser Science Conference (QELS), Baltimore, USA. Vol. 2 Institute of Electrical and Electronics Engineers (IEEE), 2005. p. 1038 - 1040.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - The position dependence of nitrogen in BAC model with 10 band Hamiltonian: band mixing effects and gain in InGaNAs/GaAs quantum well lasers

AU - Qiu, YN

AU - Rorison, JM

N1 - Other: IEEE Cat. No. 05CH37696

PY - 2005/5/22

Y1 - 2005/5/22

N2 - An improved band anti-crossing model is presented in which the position of the nitrogen within the quantum well is included. This is found to strongly influence the conduction band levels, the dipole moments and gain

AB - An improved band anti-crossing model is presented in which the position of the nitrogen within the quantum well is included. This is found to strongly influence the conduction band levels, the dipole moments and gain

U2 - 10.1109/QELS.2005.1549022

DO - 10.1109/QELS.2005.1549022

M3 - Conference Contribution (Conference Proceeding)

SN - 1557527962

VL - 2

SP - 1038

EP - 1040

BT - 2005 Quantum Electronics and Laser Science Conference (QELS), Baltimore, USA

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

The position dependence of nitrogen in BAC model with 10 band Hamiltonian: band mixing effects and gain in InGaNAs/GaAs quantum well lasers

Abstract

Bibliographical note

Research Groups and Themes

Access to Document

Handle.net

Fingerprint

Cite this