The structure and optoelectronic properties of dislocations in GaN

D Cherns

Research output: Contribution to journal › Article (Academic Journal) › peer-review

30 Citations (Scopus)

Translated title of the contribution	The structure and optoelectronic properties of dislocations in GaN
Original language	English
Article number	49
Pages (from-to)	10205 - 10212
Journal	Journal of Physics Condensed Matter
Volume	12
Publication status	Published - 2000

Publisher: IOP Publishing
Other: Invited review

Handle.net

@article{86b450f970554c8aa701242a21ae4e23,

title = "The structure and optoelectronic properties of dislocations in GaN",

author = "D Cherns",

note = "Publisher: IOP Publishing Other: Invited review",

year = "2000",

language = "English",

volume = "12",

pages = "10205 -- 10212",

journal = "Journal of Physics Condensed Matter",

issn = "1361-648X",

publisher = "IOP Publishing",

}