The study of MBE grown (011) InGa1-xP/GaAs strained layer hetrostructures by TEM and CL microscopy of semiconducting materials

The study of MBE grown (011) In_Ga₁_-_xP/GaAs strained layer hetrostructures by TEM and CL microscopy of semiconducting materials

J Wang, JW Steeds, M Hopkinson

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Translated title of the contribution	The study of MBE grown (011) In_Ga₁_-_xP/GaAs strained layer hetrostructures by TEM and CL microscopy of semiconducting materials
Original language	English
Title of host publication	Unknown
Pages	295 - 300
Number of pages	5
Volume	134
Publication status	Published - 1993

Conference Proceedings/Title of Journal: Microscopy of semiconducting materials, IOP conf. Ser

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title = "The study of MBE grown (011) InGa1-xP/GaAs strained layer hetrostructures by TEM and CL microscopy of semiconducting materials",

author = "J Wang and JW Steeds and M Hopkinson",

note = "Conference Proceedings/Title of Journal: Microscopy of semiconducting materials, IOP conf. Ser",

year = "1993",

language = "English",

volume = "134",

pages = "295 -- 300",

booktitle = "Unknown",

}

TY - GEN

T1 - The study of MBE grown (011) InGa1-xP/GaAs strained layer hetrostructures by TEM and CL microscopy of semiconducting materials

AU - Wang, J

AU - Steeds, JW

AU - Hopkinson, M

N1 - Conference Proceedings/Title of Journal: Microscopy of semiconducting materials, IOP conf. Ser

PY - 1993

Y1 - 1993

M3 - Conference Contribution (Conference Proceeding)

VL - 134

SP - 295

EP - 300

BT - Unknown

ER -