The use of micro-Raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films

MHH Kuball, JM Hayes, T Suski, J Jun, HH Tan, JS Williams, C Jagadish

Research output: Contribution to journalArticle (Academic Journal)peer-review

Translated title of the contributionThe use of micro-Raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films
Original languageEnglish
Pages (from-to)816 - 821
JournalMRS Internet J. Nitride Semicond. Res. Supplement 1
Volume5
Publication statusPublished - 2000

Bibliographical note

Publisher: Materials Research Society
Other: Page numbers prefixed by 'U'

Structured keywords

  • CDTR

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