The use of micro-Raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Translated title of the contribution	The use of micro-Raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films
Original language	English
Pages (from-to)	816 - 821
Journal	MRS Internet J. Nitride Semicond. Res. Supplement 1
Volume	5
Publication status	Published - 2000

Publisher: Materials Research Society
Other: Page numbers prefixed by 'U'

Research Groups and Themes

@article{856d4a00769542eca0d9cbb5ae1163c4,

title = "The use of micro-Raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films",

author = "MHH Kuball and JM Hayes and T Suski and J Jun and HH Tan and JS Williams and C Jagadish",

note = "Publisher: Materials Research Society Other: Page numbers prefixed by 'U'",

year = "2000",

language = "English",

volume = "5",

pages = "816 -- 821",

journal = "MRS Internet J. Nitride Semicond. Res. Supplement 1",

issn = "1092-5783",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - The use of micro-Raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films

AU - Kuball, MHH

AU - Hayes, JM

AU - Suski, T

AU - Jun, J

AU - Tan, HH

AU - Williams, JS

AU - Jagadish, C

N1 - Publisher: Materials Research Society Other: Page numbers prefixed by 'U'

PY - 2000

Y1 - 2000

M3 - Article (Academic Journal)

SN - 1092-5783

VL - 5

SP - 816

EP - 821

JO - MRS Internet J. Nitride Semicond. Res. Supplement 1

JF - MRS Internet J. Nitride Semicond. Res. Supplement 1

ER -