A theoretical model is presented that is capable of simultaneously simulating the frequency response of the carrier density, photon density, electron temperature, hole temperature, populations of nonequilibrium longitudinal and transverse optical (LO and TO) phonons at different wave vectors and lattice temperature under the modulation of a small-signal current in semiconductor lasers. The different roles of carrier and lattice heating in the static and dynamic responses of semiconductor lasers are investigated.
|Translated title of the contribution||Theoretical model of frequency response of carrier and lattice temperatures with nonequilibrium optical phonons in semiconductor lasers|
|Pages (from-to)||2337 - 2339|
|Number of pages||3|
|Publication status||Published - Nov 1999|
Bibliographical notePublisher: IEEE
Tsai, CY., Chen, CH., Chen, T., Sung, L., Tsai, CY., & Rorison, JM. (1999). Theoretical model of frequency response of carrier and lattice temperatures with nonequilibrium optical phonons in semiconductor lasers. Electronics Letters, 34 (24), 2337 - 2339. https://doi.org/10.1049/el:19981594