Theoretical model of frequency response of carrier and lattice temperatures with nonequilibrium optical phonons in semiconductor lasers

CY Tsai, CH Chen, T Chen, L Sung, CY Tsai, JM Rorison

Research output: Contribution to journalArticle (Academic Journal)

Abstract

A theoretical model is presented that is capable of simultaneously simulating the frequency response of the carrier density, photon density, electron temperature, hole temperature, populations of nonequilibrium longitudinal and transverse optical (LO and TO) phonons at different wave vectors and lattice temperature under the modulation of a small-signal current in semiconductor lasers. The different roles of carrier and lattice heating in the static and dynamic responses of semiconductor lasers are investigated.
Translated title of the contributionTheoretical model of frequency response of carrier and lattice temperatures with nonequilibrium optical phonons in semiconductor lasers
Original languageEnglish
Pages (from-to)2337 - 2339
Number of pages3
JournalElectronics Letters
Volume34 (24)
DOIs
Publication statusPublished - Nov 1999

Bibliographical note

Publisher: IEEE

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