Theoretical model of frequency response of carrier and lattice temperatures with nonequilibrium optical phonons in semiconductor lasers

CY Tsai; CH Chen; T Chen; L Sung; CY Tsai; JM Rorison

doi:10.1049/el:19981594

Theoretical model of frequency response of carrier and lattice temperatures with nonequilibrium optical phonons in semiconductor lasers

CY Tsai
, CH Chen
, T Chen
, L Sung
, CY Tsai
, JM Rorison

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Abstract

A theoretical model is presented that is capable of simultaneously simulating the frequency response of the carrier density, photon density, electron temperature, hole temperature, populations of nonequilibrium longitudinal and transverse optical (LO and TO) phonons at different wave vectors and lattice temperature under the modulation of a small-signal current in semiconductor lasers. The different roles of carrier and lattice heating in the static and dynamic responses of semiconductor lasers are investigated.

Translated title of the contribution	Theoretical model of frequency response of carrier and lattice temperatures with nonequilibrium optical phonons in semiconductor lasers
Original language	English
Pages (from-to)	2337 - 2339
Number of pages	3
Journal	Electronics Letters
Volume	34 (24)
DOIs	https://doi.org/10.1049/el:19981594
Publication status	Published - Nov 1999

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Publisher: IEEE

Research Groups and Themes

Photonics and Quantum

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@article{804754b89b3841da9b9d6bb87b50f73a,

title = "Theoretical model of frequency response of carrier and lattice temperatures with nonequilibrium optical phonons in semiconductor lasers",

abstract = "A theoretical model is presented that is capable of simultaneously simulating the frequency response of the carrier density, photon density, electron temperature, hole temperature, populations of nonequilibrium longitudinal and transverse optical (LO and TO) phonons at different wave vectors and lattice temperature under the modulation of a small-signal current in semiconductor lasers. The different roles of carrier and lattice heating in the static and dynamic responses of semiconductor lasers are investigated.",

author = "CY Tsai and CH Chen and T Chen and L Sung and CY Tsai and JM Rorison",

note = "Publisher: IEEE",

year = "1999",

month = nov,

doi = "10.1049/el:19981594",

language = "English",

volume = "34 (24)",

pages = "2337 -- 2339",

journal = "Electronics Letters",

issn = "1350-911X",

publisher = "John Wiley \& Sons, Inc",

}

TY - JOUR

T1 - Theoretical model of frequency response of carrier and lattice temperatures with nonequilibrium optical phonons in semiconductor lasers

AU - Tsai, CY

AU - Chen, CH

AU - Chen, T

AU - Sung, L

AU - Tsai, CY

AU - Rorison, JM

N1 - Publisher: IEEE

PY - 1999/11

Y1 - 1999/11

N2 - A theoretical model is presented that is capable of simultaneously simulating the frequency response of the carrier density, photon density, electron temperature, hole temperature, populations of nonequilibrium longitudinal and transverse optical (LO and TO) phonons at different wave vectors and lattice temperature under the modulation of a small-signal current in semiconductor lasers. The different roles of carrier and lattice heating in the static and dynamic responses of semiconductor lasers are investigated.

AB - A theoretical model is presented that is capable of simultaneously simulating the frequency response of the carrier density, photon density, electron temperature, hole temperature, populations of nonequilibrium longitudinal and transverse optical (LO and TO) phonons at different wave vectors and lattice temperature under the modulation of a small-signal current in semiconductor lasers. The different roles of carrier and lattice heating in the static and dynamic responses of semiconductor lasers are investigated.

U2 - 10.1049/el:19981594

DO - 10.1049/el:19981594

M3 - Article (Academic Journal)

SN - 1350-911X

VL - 34 (24)

SP - 2337

EP - 2339

JO - Electronics Letters

JF - Electronics Letters

ER -

Theoretical model of frequency response of carrier and lattice temperatures with nonequilibrium optical phonons in semiconductor lasers

Abstract

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