Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers

Christopher A Broderick, Silviu Bogusevschi, Eoin P. O’Reilly

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

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Abstract

The use of InGaAs metamorphic buffer layers (MBLs) to facilitate the growth of lattice-mismatched heterostructures constitutes an attractive approach to developing long-wavelength semiconductor lasers on GaAs substrates, since they offer the improved carrier and optical confinement associated with GaAs-based materials. We present a theoretical study of GaAs-based 1.3 and 1.55 μm (Al)InGaAs quantum well (QW) lasers grown on InGaAs MBLs. We demonstrate that optimised 1.3 μm metamorphic devices offer low threshold current densities and high differential gain, which compare favourably with InP-based devices. Overall, our analysis highlights and quantifies the potential of metamorphic QWs for the development of GaAs-based long-wavelength semiconductor lasers, and also provides guidelines for the design of optimised devices.
Original languageEnglish
Title of host publication2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016)
Subtitle of host publicationProceedings of a meeting held 11-15 July 2016, Sydney, Australia
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages19-20
Number of pages2
ISBN (Electronic)9781467386036
ISBN (Print)9781467386043
DOIs
Publication statusPublished - Sep 2016
EventNumerical Simulation of Optoelectronic Devices - University of Sydney, Sydney, Australia
Duration: 11 Jul 201615 Jul 2016

Publication series

NameProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISSN (Print)2158-3234

Conference

ConferenceNumerical Simulation of Optoelectronic Devices
Abbreviated titleNUSOD
CountryAustralia
CitySydney
Period11/07/1615/07/16

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