Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers

Christopher A Broderick; Silviu Bogusevschi; Eoin P. O’Reilly

doi:10.1109/NUSOD.2016.7546993

Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers

Christopher A Broderick
, Silviu Bogusevschi
, Eoin P. O’Reilly

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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Abstract

The use of InGaAs metamorphic buffer layers (MBLs) to facilitate the growth of lattice-mismatched heterostructures constitutes an attractive approach to developing long-wavelength semiconductor lasers on GaAs substrates, since they offer the improved carrier and optical confinement associated with GaAs-based materials. We present a theoretical study of GaAs-based 1.3 and 1.55 μm (Al)InGaAs quantum well (QW) lasers grown on InGaAs MBLs. We demonstrate that optimised 1.3 μm metamorphic devices offer low threshold current densities and high differential gain, which compare favourably with InP-based devices. Overall, our analysis highlights and quantifies the potential of metamorphic QWs for the development of GaAs-based long-wavelength semiconductor lasers, and also provides guidelines for the design of optimised devices.

Original language	English
Title of host publication	2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016)
Subtitle of host publication	Proceedings of a meeting held 11-15 July 2016, Sydney, Australia
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	19-20
Number of pages	2
ISBN (Electronic)	9781467386036
ISBN (Print)	9781467386043
DOIs	https://doi.org/10.1109/NUSOD.2016.7546993
Publication status	Published - Sept 2016
Event	Numerical Simulation of Optoelectronic Devices - University of Sydney, Sydney, Australia Duration: 11 Jul 2016 → 15 Jul 2016

Publication series

Name	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
ISSN (Print)	2158-3234

Conference

Conference	Numerical Simulation of Optoelectronic Devices
Abbreviated title	NUSOD
Country/Territory	Australia
City	Sydney
Period	11/07/16 → 15/07/16

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10.1109/NUSOD.2016.7546993

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Broderick, C. A., Bogusevschi, S., & O’Reilly, E. P. (2016). Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers. In 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia (pp. 19-20). (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/NUSOD.2016.7546993

Broderick, Christopher A ; Bogusevschi, Silviu ; O’Reilly, Eoin P. / Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers. 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE), 2016. pp. 19-20 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)).

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title = "Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers",

abstract = "The use of InGaAs metamorphic buffer layers (MBLs) to facilitate the growth of lattice-mismatched heterostructures constitutes an attractive approach to developing long-wavelength semiconductor lasers on GaAs substrates, since they offer the improved carrier and optical confinement associated with GaAs-based materials. We present a theoretical study of GaAs-based 1.3 and 1.55 μm (Al)InGaAs quantum well (QW) lasers grown on InGaAs MBLs. We demonstrate that optimised 1.3 μm metamorphic devices offer low threshold current densities and high differential gain, which compare favourably with InP-based devices. Overall, our analysis highlights and quantifies the potential of metamorphic QWs for the development of GaAs-based long-wavelength semiconductor lasers, and also provides guidelines for the design of optimised devices.",

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Broderick, CA, Bogusevschi, S & O’Reilly, EP 2016, Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers. in 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Institute of Electrical and Electronics Engineers (IEEE), pp. 19-20, Numerical Simulation of Optoelectronic Devices, Sydney, Australia, 11/07/16. https://doi.org/10.1109/NUSOD.2016.7546993

Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers. / Broderick, Christopher A; Bogusevschi, Silviu; O’Reilly, Eoin P.
2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 19-20 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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N2 - The use of InGaAs metamorphic buffer layers (MBLs) to facilitate the growth of lattice-mismatched heterostructures constitutes an attractive approach to developing long-wavelength semiconductor lasers on GaAs substrates, since they offer the improved carrier and optical confinement associated with GaAs-based materials. We present a theoretical study of GaAs-based 1.3 and 1.55 μm (Al)InGaAs quantum well (QW) lasers grown on InGaAs MBLs. We demonstrate that optimised 1.3 μm metamorphic devices offer low threshold current densities and high differential gain, which compare favourably with InP-based devices. Overall, our analysis highlights and quantifies the potential of metamorphic QWs for the development of GaAs-based long-wavelength semiconductor lasers, and also provides guidelines for the design of optimised devices.

AB - The use of InGaAs metamorphic buffer layers (MBLs) to facilitate the growth of lattice-mismatched heterostructures constitutes an attractive approach to developing long-wavelength semiconductor lasers on GaAs substrates, since they offer the improved carrier and optical confinement associated with GaAs-based materials. We present a theoretical study of GaAs-based 1.3 and 1.55 μm (Al)InGaAs quantum well (QW) lasers grown on InGaAs MBLs. We demonstrate that optimised 1.3 μm metamorphic devices offer low threshold current densities and high differential gain, which compare favourably with InP-based devices. Overall, our analysis highlights and quantifies the potential of metamorphic QWs for the development of GaAs-based long-wavelength semiconductor lasers, and also provides guidelines for the design of optimised devices.

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Broderick CA, Bogusevschi S, O’Reilly EP. Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers. In 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE). 2016. p. 19-20. (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)). Epub 2016 Aug 18. doi: 10.1109/NUSOD.2016.7546993

Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers

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