Theory of InGaBiAs dilute bismide alloys for highly efficient InP-based mid-infrared semiconductor lasers

Christopher A Broderick, Wanshu Xiong, Judy M Rorison

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

4 Citations (Scopus)
317 Downloads (Pure)

Abstract

We present a theoretical analysis of the properties and performance of mid-infrared dilute bismide quantum well (QW) lasers grown on InP substrates. We analyse the band structure of strained InGaBiAs alloys and quantify their potential for the development of mid-infrared semiconductor lasers. In addition to identifying the permissible growth combinations for this class of laser structures, we perform a comprehensive analysis of the performance of a series of ideal laser structures. We investigate the variation of key material and device parameters on the alloy composition, QW thickness and epitaxial strain, and on this basis identify optimised laser structures for emission across the 3 – 5 m wavelength range. Our theoretical analysis suggests that InP-based dilute bismide alloys are an extremely promising candidate material system for the development of highly efficient and temperature stable laser diodes operating in the mid-infrared, and also that this class of laser structures is highly compatible with existing InP-based device architectures.
Original languageEnglish
Title of host publication2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016)
Subtitle of host publicationProceedings of a meeting held 11-15 July 2016, Sydney, Australia
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages47-48
Number of pages2
ISBN (Electronic)9781467386036
ISBN (Print)9781467386043
DOIs
Publication statusPublished - Sep 2016
EventNumerical Simulation of Optoelectronic Devices - University of Sydney, Sydney, Australia
Duration: 11 Jul 201615 Jul 2016

Publication series

NameProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISSN (Print)2158-3234

Conference

ConferenceNumerical Simulation of Optoelectronic Devices
Abbreviated titleNUSOD
CountryAustralia
CitySydney
Period11/07/1615/07/16

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