Theory of InGaBiAs dilute bismide alloys for highly efficient InP-based mid-infrared semiconductor lasers

Christopher A Broderick; Wanshu Xiong; Judy M Rorison

doi:10.1109/NUSOD.2016.7547020

Theory of InGaBiAs dilute bismide alloys for highly efficient InP-based mid-infrared semiconductor lasers

Christopher A Broderick
, Wanshu Xiong
, Judy M Rorison

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

4 Citations (Scopus)

415 Downloads (Pure)

Abstract

We present a theoretical analysis of the properties and performance of mid-infrared dilute bismide quantum well (QW) lasers grown on InP substrates. We analyse the band structure of strained InGaBiAs alloys and quantify their potential for the development of mid-infrared semiconductor lasers. In addition to identifying the permissible growth combinations for this class of laser structures, we perform a comprehensive analysis of the performance of a series of ideal laser structures. We investigate the variation of key material and device parameters on the alloy composition, QW thickness and epitaxial strain, and on this basis identify optimised laser structures for emission across the 3 – 5 m wavelength range. Our theoretical analysis suggests that InP-based dilute bismide alloys are an extremely promising candidate material system for the development of highly efficient and temperature stable laser diodes operating in the mid-infrared, and also that this class of laser structures is highly compatible with existing InP-based device architectures.

Original language	English
Title of host publication	2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016)
Subtitle of host publication	Proceedings of a meeting held 11-15 July 2016, Sydney, Australia
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	47-48
Number of pages	2
ISBN (Electronic)	9781467386036
ISBN (Print)	9781467386043
DOIs	https://doi.org/10.1109/NUSOD.2016.7547020
Publication status	Published - Sept 2016
Event	Numerical Simulation of Optoelectronic Devices - University of Sydney, Sydney, Australia Duration: 11 Jul 2016 → 15 Jul 2016

Publication series

Name	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
ISSN (Print)	2158-3234

Conference

Conference	Numerical Simulation of Optoelectronic Devices
Abbreviated title	NUSOD
Country/Territory	Australia
City	Sydney
Period	11/07/16 → 15/07/16

Research Groups and Themes

Photonics and Quantum

Access to Document

10.1109/NUSOD.2016.7547020

Full-text PDF (accepted author manuscript)
This is the author accepted manuscript (AAM). The final published version (version of record) is available online via NUSOD at http://www.nusod.org/2016/conf_program.html. Please refer to any applicable terms of use of the publisher.
Accepted author manuscript, 186 KB

Handle.net

Persistent link

Semiconductor III-V Quantum-Dot Solar Cells on Silicon Substrates
Rorison, J. M. (Principal Investigator)
1/07/13 → 30/06/17
Project: Research

Cite this

Broderick, C. A., Xiong, W., & Rorison, J. M. (2016). Theory of InGaBiAs dilute bismide alloys for highly efficient InP-based mid-infrared semiconductor lasers. In 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia (pp. 47-48). (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/NUSOD.2016.7547020

Broderick, Christopher A ; Xiong, Wanshu ; Rorison, Judy M. / Theory of InGaBiAs dilute bismide alloys for highly efficient InP-based mid-infrared semiconductor lasers. 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE), 2016. pp. 47-48 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)).

@inproceedings{3f9666be9afb404c9671359840373aa8,

title = "Theory of InGaBiAs dilute bismide alloys for highly efficient InP-based mid-infrared semiconductor lasers",

abstract = "We present a theoretical analysis of the properties and performance of mid-infrared dilute bismide quantum well (QW) lasers grown on InP substrates. We analyse the band structure of strained InGaBiAs alloys and quantify their potential for the development of mid-infrared semiconductor lasers. In addition to identifying the permissible growth combinations for this class of laser structures, we perform a comprehensive analysis of the performance of a series of ideal laser structures. We investigate the variation of key material and device parameters on the alloy composition, QW thickness and epitaxial strain, and on this basis identify optimised laser structures for emission across the 3 – 5 m wavelength range. Our theoretical analysis suggests that InP-based dilute bismide alloys are an extremely promising candidate material system for the development of highly efficient and temperature stable laser diodes operating in the mid-infrared, and also that this class of laser structures is highly compatible with existing InP-based device architectures.",

author = "Broderick, \{Christopher A\} and Wanshu Xiong and Rorison, \{Judy M\}",

year = "2016",

month = sep,

doi = "10.1109/NUSOD.2016.7547020",

language = "English",

isbn = "9781467386043",

series = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

pages = "47--48",

booktitle = "2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016)",

address = "United States",

note = "Numerical Simulation of Optoelectronic Devices, NUSOD ; Conference date: 11-07-2016 Through 15-07-2016",

}

Broderick, CA, Xiong, W & Rorison, JM 2016, Theory of InGaBiAs dilute bismide alloys for highly efficient InP-based mid-infrared semiconductor lasers. in 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Institute of Electrical and Electronics Engineers (IEEE), pp. 47-48, Numerical Simulation of Optoelectronic Devices, Sydney, Australia, 11/07/16. https://doi.org/10.1109/NUSOD.2016.7547020

Theory of InGaBiAs dilute bismide alloys for highly efficient InP-based mid-infrared semiconductor lasers. / Broderick, Christopher A; Xiong, Wanshu; Rorison, Judy M.
2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 47-48 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Theory of InGaBiAs dilute bismide alloys for highly efficient InP-based mid-infrared semiconductor lasers

AU - Broderick, Christopher A

AU - Xiong, Wanshu

AU - Rorison, Judy M

PY - 2016/9

Y1 - 2016/9

N2 - We present a theoretical analysis of the properties and performance of mid-infrared dilute bismide quantum well (QW) lasers grown on InP substrates. We analyse the band structure of strained InGaBiAs alloys and quantify their potential for the development of mid-infrared semiconductor lasers. In addition to identifying the permissible growth combinations for this class of laser structures, we perform a comprehensive analysis of the performance of a series of ideal laser structures. We investigate the variation of key material and device parameters on the alloy composition, QW thickness and epitaxial strain, and on this basis identify optimised laser structures for emission across the 3 – 5 m wavelength range. Our theoretical analysis suggests that InP-based dilute bismide alloys are an extremely promising candidate material system for the development of highly efficient and temperature stable laser diodes operating in the mid-infrared, and also that this class of laser structures is highly compatible with existing InP-based device architectures.

AB - We present a theoretical analysis of the properties and performance of mid-infrared dilute bismide quantum well (QW) lasers grown on InP substrates. We analyse the band structure of strained InGaBiAs alloys and quantify their potential for the development of mid-infrared semiconductor lasers. In addition to identifying the permissible growth combinations for this class of laser structures, we perform a comprehensive analysis of the performance of a series of ideal laser structures. We investigate the variation of key material and device parameters on the alloy composition, QW thickness and epitaxial strain, and on this basis identify optimised laser structures for emission across the 3 – 5 m wavelength range. Our theoretical analysis suggests that InP-based dilute bismide alloys are an extremely promising candidate material system for the development of highly efficient and temperature stable laser diodes operating in the mid-infrared, and also that this class of laser structures is highly compatible with existing InP-based device architectures.

U2 - 10.1109/NUSOD.2016.7547020

DO - 10.1109/NUSOD.2016.7547020

M3 - Conference Contribution (Conference Proceeding)

SN - 9781467386043

T3 - Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

SP - 47

EP - 48

BT - 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016)

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - Numerical Simulation of Optoelectronic Devices

Y2 - 11 July 2016 through 15 July 2016

ER -

Broderick CA, Xiong W, Rorison JM. Theory of InGaBiAs dilute bismide alloys for highly efficient InP-based mid-infrared semiconductor lasers. In 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE). 2016. p. 47-48. (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)). Epub 2016 Aug 18. doi: 10.1109/NUSOD.2016.7547020

Theory of InGaBiAs dilute bismide alloys for highly efficient InP-based mid-infrared semiconductor lasers

Abstract

Publication series

Conference

Research Groups and Themes

Access to Document

Handle.net

Fingerprint

Projects

Semiconductor III-V Quantum-Dot Solar Cells on Silicon Substrates

Cite this