Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

A Sarua; H Ji; KP Hilton; DJ Wallis; MJ Uren; T Martin; M Kuball

doi:10.1109/TED.2007.908874

Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

A Sarua
, H Ji
, KP Hilton
, DJ Wallis
, MJ Uren
, T Martin
, M Kuball

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

289 Citations (Scopus)

Translated title of the contribution	Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices
Original language	English
Pages (from-to)	3152 - 3158
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	54(12)
DOIs	https://doi.org/10.1109/TED.2007.908874
Publication status	Published - Dec 2007

Bibliographical note

Publisher: IEEE Publications

Research Groups and Themes

CDTR

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10.1109/TED.2007.908874

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289 Citations
1 Other Conference Contribution

Novel Raman spectroscopy imaging in electronic devices: focus on device reliability
Sarua, A., Pomeroy, J. W., Uren, M. J. & Kuball, M. H. H., 24 Jan 2012.
Research output: Contribution to conference › Other Conference Contribution

1 Finished

THERMAL IMAGING OF ACTIVE A1GAN/GAN FIELD EFFECT TRANSISTORS USING MICRO RAMAN SPECTROSCOPY
Kuball, M. H. H. (Principal Investigator)
19/03/04 → 19/03/07
Project: Research

Cite this

@article{866735452acd4ba2bbe075bd4db655b1,

title = "Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices",

author = "A Sarua and H Ji and KP Hilton and DJ Wallis and MJ Uren and T Martin and M Kuball",

note = "Publisher: IEEE Publications",

year = "2007",

month = dec,

doi = "10.1109/TED.2007.908874",

language = "English",

volume = "54(12)",

pages = "3152 -- 3158",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

TY - JOUR

T1 - Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

AU - Sarua, A

AU - Ji, H

AU - Hilton, KP

AU - Wallis, DJ

AU - Uren, MJ

AU - Martin, T

AU - Kuball, M

N1 - Publisher: IEEE Publications

PY - 2007/12

Y1 - 2007/12

U2 - 10.1109/TED.2007.908874

DO - 10.1109/TED.2007.908874

M3 - Article (Academic Journal)

SN - 0018-9383

VL - 54(12)

SP - 3152

EP - 3158

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

ER -

Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

Bibliographical note

Research Groups and Themes

Access to Document

Handle.net

Research output

Novel Raman spectroscopy imaging in electronic devices: focus on device reliability

Projects

THERMAL IMAGING OF ACTIVE A1GAN/GAN FIELD EFFECT TRANSISTORS USING MICRO RAMAN SPECTROSCOPY

Cite this