Thermal characterization of direct wafer bonded Si-on-SiC

Daniel E Field, James W Pomeroy, Farzan Gity, Michael Schmidt, Pasqualino Torchia, Fan Li, Peter Gammon, Vishal A. Shah, Martin H H Kuball*

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

8 Citations (Scopus)

Abstract

Direct bonded Si-on-SiC is an interesting alternative to silicon-on-insulator (SOI) for improved thermal management in power conversion and radio frequency applications in space. We have used transient thermoreflectance and finite element simulations to characterize the thermal properties of direct bonded Si-on-4H–SiC samples, utilizing a hydrophobic and hydrophilic bonding process. In both instances, the interface has good thermal properties resulting in TBReff values of 6 + 4/−2 m2 K GW−1 (hydrophobic) and 9 + 3/−2 m2 K GW−1 (hydrophilic). Two-dimensional finite element simulations for an equivalent MOSFET showed the significant thermal benefit of using Si-on-SiC over SOI. In these simulations, a MOSFET with a 200 nm thick, 42 μm wide Si drift region was recreated on a SOI structure (2 μm buried oxide) and on the Si-on-SiC material characterized here. At 5 W mm−1 power dissipation, the Si-on-SiC was shown to result in a >60% decrease in temperature rise compared to the SOI structure.
Original languageEnglish
Article number113503
Number of pages7
JournalApplied Physics Letters
Volume120
Issue number11
DOIs
Publication statusPublished - 16 Mar 2022

Bibliographical note

D. Field’s Ph.D. studentship is co-funded by the EPSRC
Centre for Doctoral Training in Diamond Science & Technology
(No. EP/L015315/1) and Element-Six.

Research Groups and Themes

  • CDTR

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