Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

Yan Zhou; Rajesh Ramaneti; Julian Anaya; Svetlana Korneychuk; Joff Derluyn; Huarui Sun; James Pomeroy; Johan Verbeeck; Ken Haenen; Martin Kuball

doi:10.1063/1.4995407

Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

Yan Zhou^*, Rajesh Ramaneti, Julian Anaya, Svetlana Korneychuk, Joff Derluyn, Huarui Sun, James Pomeroy, Johan Verbeeck, Ken Haenen, Martin Kuball

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

29 Citations (Scopus)

338 Downloads (Pure)

Abstract

Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (κ_Dia) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of κ_Dia in the measured 25-225 °C range. Device simulation using the experimental κ_Dia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD.

Original language	English
Article number	041901
Number of pages	5
Journal	Applied Physics Letters
Volume	111
Issue number	4
Early online date	24 Jul 2017
DOIs	https://doi.org/10.1063/1.4995407
Publication status	Published - 24 Jul 2017

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@article{867e401ab69941acb15cd23623412d95,

title = "Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs",

abstract = "Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (κDia) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of κDia in the measured 25-225 °C range. Device simulation using the experimental κDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD.",

author = "Yan Zhou and Rajesh Ramaneti and Julian Anaya and Svetlana Korneychuk and Joff Derluyn and Huarui Sun and James Pomeroy and Johan Verbeeck and Ken Haenen and Martin Kuball",

year = "2017",

month = jul,

day = "24",

doi = "10.1063/1.4995407",

language = "English",

volume = "111",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "4",

}

Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs. / Zhou, Yan; Ramaneti, Rajesh; Anaya, Julian; Korneychuk, Svetlana; Derluyn, Joff; Sun, Huarui; Pomeroy, James; Verbeeck, Johan; Haenen, Ken; Kuball, Martin.

In: Applied Physics Letters, Vol. 111, No. 4, 041901, 24.07.2017.

Research output: Contribution to journal › Article (Academic Journal) › peer-review

TY - JOUR

T1 - Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

AU - Zhou, Yan

AU - Ramaneti, Rajesh

AU - Anaya, Julian

AU - Korneychuk, Svetlana

AU - Derluyn, Joff

AU - Sun, Huarui

AU - Pomeroy, James

AU - Verbeeck, Johan

AU - Haenen, Ken

AU - Kuball, Martin

PY - 2017/7/24

Y1 - 2017/7/24

N2 - Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (κDia) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of κDia in the measured 25-225 °C range. Device simulation using the experimental κDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD.

AB - Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (κDia) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of κDia in the measured 25-225 °C range. Device simulation using the experimental κDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD.

U2 - 10.1063/1.4995407

DO - 10.1063/1.4995407

M3 - Article (Academic Journal)

AN - SCOPUS:85025807445

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 041901

ER -