Abstract
The thermal transport in polycrystalline diamond films near its nucleation region is still not well understood. Here, a steady-state technique to determine the thermal transport within the nano-crystalline diamond present at their nucleation site has been demonstrated. Taking advantage of silicon nanowires as surface temperature nano-sensors, and using Raman Thermography, the in-plane and cross-plane components of the thermal conductivity of ultra-thin diamond layers and their thermal barrier to the Si substrate were determined. Both components of the thermal conductivity of the nano-crystalline diamond were found to be well below the values of polycrystalline bulk diamond, with a cross-plane thermal conductivity larger than the in-plane thermal conductivity. Also a depth dependence of the lateral thermal conductivity through the diamond layer was determined. The results impact the design and integration of diamond for thermal management of AlGaN/GaN high power transistors and also show the usefulness of the nanowires as accurate nano-thermometers
Original language | English |
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Article number | 223101 |
Number of pages | 5 |
Journal | Applied Physics Letters |
Volume | 106 |
Issue number | 22 |
DOIs | |
Publication status | Published - 1 Jun 2015 |
Structured keywords
- CDTR
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Dive into the research topics of 'Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires'. Together they form a unique fingerprint.Profiles
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Professor Martin H H Kuball
- School of Physics - Professor of Physics (Royal Society Wolfson Research Merit Award Holder)
Person: Academic