Gallium nitride based transistors are a disruptive technology in high-power RF and power conversion applications. Maintaining device temperatures within a safe operating area is critically important to ensure reliable long term operation, although this becomes ever more challenging as increasing power densities are required. We review recent developments in thermal management, from understanding where heat is generated during different modes of transistor operation (DC versus RF), to near junction thermal management strategies, including high thermal conductivity diamond substrates.
|Publication status||Unpublished - 2016|
|Event||AES 2016 Malaga - Spain The 4th Advanced Electromagnetics Symposium - Malaga, Spain|
Duration: 26 Jul 2016 → 28 Jul 2016
|Conference||AES 2016 Malaga - Spain The 4th Advanced Electromagnetics Symposium|
|Period||26/07/16 → 28/07/16|