Thermal Management of GaN Electronics

Research output: Contribution to conferenceConference Abstract

Abstract

Gallium nitride based transistors are a disruptive technology in high-power RF and power conversion applications. Maintaining device temperatures within a safe operating area is critically important to ensure reliable long term operation, although this becomes ever more challenging as increasing power densities are required. We review recent developments in thermal management, from understanding where heat is generated during different modes of transistor operation (DC versus RF), to near junction thermal management strategies, including high thermal conductivity diamond substrates.
Original languageEnglish
Publication statusUnpublished - 2016
EventAES 2016 Malaga - Spain The 4th Advanced Electromagnetics Symposium - Malaga, Spain
Duration: 26 Jul 201628 Jul 2016
http://mysymposia.org/index.php/AES16/AES16

Conference

ConferenceAES 2016 Malaga - Spain The 4th Advanced Electromagnetics Symposium
CountrySpain
CityMalaga
Period26/07/1628/07/16
Internet address

Structured keywords

  • CDTR

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  • Cite this

    Pomeroy, J., & Kuball, M. (2016). Thermal Management of GaN Electronics. Abstract from AES 2016 Malaga - Spain The 4th Advanced Electromagnetics Symposium, Malaga, Spain.