Thermal management of GaN-on-diamond high electron mobility transistors: Effect of the nanostructure in the diamond near nucleation region

J. Anaya, H. Sun, J. Pomeroy, M. Kuball

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

11 Citations (Scopus)

Abstract

The integration of diamond in ultra-high power GaN HEMT devices has demonstrated to be a very promising strategy to increase the device lifetime and their thermal management. Typically polycrystalline diamond films rather than single crystal diamond are used for this purpose, however for this material the thermal transport in the near-nucleation site is strongly affected by the small grain size and the accumulation of defects in this region. Here we modeled the phonon thermal transport in diamond, including the effect of the polycrystalline structure, showing that its thermal conductivity exhibits very different properties to those observed in single crystal diamond; namely, the thermal conductivity is severely reduced, the grain structure may induce anisotropy in the heat conduction and also a strong variation of the thermal conductivity from the nucleation and following the diamond growth direction is observed. All these features are included in a full thermal model of a GaN high power amplifier, showing their impact on the thermal management of the device. We show that including the full description of the polycrystalline diamond thermal conductivity is fundamental to accurately assess the thermal management of these devices, and thus to optimize their design.

Original languageEnglish
Title of host publication2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1558-1565
Number of pages8
ISBN (Electronic)9781467381215
DOIs
Publication statusE-pub ahead of print - 20 Jul 2016
Event15th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2016 - Las Vegas, United States
Duration: 31 May 20163 Jun 2016

Conference

Conference15th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2016
CountryUnited States
CityLas Vegas
Period31/05/163/06/16

Structured keywords

  • CDTR

Keywords

  • III-V semiconductors
  • diamond
  • gallium compounds
  • power HEMT
  • power amplifiers
  • thermal conductivity
  • thermal management (packaging)
  • wide band gap semiconductors
  • GaN
  • GaN high power amplifier
  • GaN-on-diamond high electron mobility transistors
  • device lifetime
  • nanostructure effect
  • phonon thermal transport
  • polycrystalline diamond films
  • single crystal diamond
  • thermal management
  • ultrahigh power GaN HEMT devices
  • Conductivity
  • Diamond
  • Gallium nitride
  • Grain size
  • HEMTs
  • Thermal conductivity
  • Thermal management
  • Finite Element Analysis
  • GaN-on-Diamond
  • Thermal Conductivity

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