Thermal mapping of defects in AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

JW Pomeroy; M Kuball; DJ Wallis; AM Keir; KP Hilton; RS Balmer; MJ Uren; T Martin; PJ Heard

doi:10.1063/1.2041823

Thermal mapping of defects in AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

JW Pomeroy, M Kuball, DJ Wallis, AM Keir, KP Hilton, RS Balmer, MJ Uren, T Martin, PJ Heard

Research output: Contribution to journal › Article (Academic Journal) › peer-review

34 Citations (Scopus)

Translated title of the contribution	Thermal mapping of defects in AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
Original language	English
Pages (from-to)	103508-1 - 103508-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87(10)
DOIs	https://doi.org/10.1063/1.2041823
Publication status	Published - Sep 2005

Bibliographical note

Publisher: American Institute of Physics

Structured keywords

CDTR

Access to Document

10.1063/1.2041823

34 Citations
1 Other Conference Contribution

Novel Raman spectroscopy imaging in electronic devices: focus on device reliability
Sarua, A., Pomeroy, J. W., Uren, M. J. & Kuball, M. H. H., 24 Jan 2012.
Research output: Contribution to conference › Other Conference Contribution

1 Finished

THERMAL IMAGING OF ACTIVE A1GAN/GAN FIELD EFFECT TRANSISTORS USING MICRO RAMAN SPECTROSCOPY
Kuball, M. H. H.
19/03/04 → 19/03/07
Project: Research

Cite this

@article{be6e4adcf1e94156969149a29f00fde6,

title = "Thermal mapping of defects in AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy",

author = "JW Pomeroy and M Kuball and DJ Wallis and AM Keir and KP Hilton and RS Balmer and MJ Uren and T Martin and PJ Heard",

note = "Publisher: American Institute of Physics",

year = "2005",

month = sep,

doi = "10.1063/1.2041823",

language = "English",

volume = "87(10)",

pages = "103508--1 -- 103508--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

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Thermal mapping of defects in AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy. / Pomeroy, JW ; Kuball, M; Wallis, DJ; Keir, AM; Hilton, KP; Balmer, RS; Uren, MJ; Martin, T; Heard, PJ.

In: Applied Physics Letters, Vol. 87(10), 09.2005, p. 103508-1 - 103508-3.

Research output: Contribution to journal › Article (Academic Journal) › peer-review

TY - JOUR

T1 - Thermal mapping of defects in AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

AU - Pomeroy, JW

AU - Kuball, M

AU - Wallis, DJ

AU - Keir, AM

AU - Hilton, KP

AU - Balmer, RS

AU - Uren, MJ

AU - Martin, T

AU - Heard, PJ

N1 - Publisher: American Institute of Physics

PY - 2005/9

Y1 - 2005/9

U2 - 10.1063/1.2041823

DO - 10.1063/1.2041823

M3 - Article (Academic Journal)

VL - 87(10)

SP - 103508-1 - 103508-3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -

Thermal mapping of defects in AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

Bibliographical note

Structured keywords

Access to Document

Research output

Novel Raman spectroscopy imaging in electronic devices: focus on device reliability

Projects

THERMAL IMAGING OF ACTIVE A1GAN/GAN FIELD EFFECT TRANSISTORS USING MICRO RAMAN SPECTROSCOPY

Cite this