Thermal transport in Superlattice Castellated Field Effect Transistors

Callum Middleton; Stefano Dalcanale; Michael Uren; James Pomeroy; Michael J Uren; Josephine Chang; Justine Parke; Ishan Wathuthanthri; Ken Nagamatsu; Salat Salaru; Martin Kuball

doi:10.1109/LED.2019.2929424

Thermal transport in Superlattice Castellated Field Effect Transistors

Callum Middleton
, Stefano Dalcanale
, Michael Uren
, James Pomeroy
, Michael J Uren
, Josephine Chang
, Justine Parke
, Ishan Wathuthanthri
, Ken Nagamatsu
, Salat Salaru
, Martin Kuball

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

Heat extraction from novel GaN/AlGaN superlattice castellated field effect transistors developed as an RF switch is studied. The device thermal resistance was determined as 19.1 ± 0.7 K/(W/mm) from a combination of Raman thermography
measurements, and gate resistance thermometry. Finite element simulations were used to predict the peak temperatures and show that the three-dimensional gate structure aids the extraction of heat generated in the channel. The calculated heat flux in the castellations shows that the gate metal provides a high thermal conductivity path, bypassing the lower thermal conductivity superlattice, reducing channel temperatures by as much as 23%.

Original language	English
Pages (from-to)	1374-1377
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	9
DOIs	https://doi.org/10.1109/LED.2019.2929424
Publication status	Published - 18 Jul 2019

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Research Groups and Themes

CDTR

Keywords

Logic gates
Temperature measurement
Heating systems
Thermal resistance
Thermal conductivity
Superlattices

Access to Document

10.1109/LED.2019.2929424

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ECCI proposal
Kuball, M. H. H. (Principal Investigator)
1/06/17 → 30/11/20
Project: Research

Cite this

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title = "Thermal transport in Superlattice Castellated Field Effect Transistors",

abstract = "Heat extraction from novel GaN/AlGaN superlattice castellated field effect transistors developed as an RF switch is studied. The device thermal resistance was determined as 19.1 ± 0.7 K/(W/mm) from a combination of Raman thermography measurements, and gate resistance thermometry. Finite element simulations were used to predict the peak temperatures and show that the three-dimensional gate structure aids the extraction of heat generated in the channel. The calculated heat flux in the castellations shows that the gate metal provides a high thermal conductivity path, bypassing the lower thermal conductivity superlattice, reducing channel temperatures by as much as 23\%. ",

keywords = "Logic gates, Temperature measurement, Heating systems, Thermal resistance, Thermal conductivity, Superlattices",

author = "Callum Middleton and Stefano Dalcanale and Michael Uren and James Pomeroy and Uren, \{Michael J\} and Josephine Chang and Justine Parke and Ishan Wathuthanthri and Ken Nagamatsu and Salat Salaru and Martin Kuball",

year = "2019",

month = jul,

day = "18",

doi = "10.1109/LED.2019.2929424",

language = "English",

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T1 - Thermal transport in Superlattice Castellated Field Effect Transistors

AU - Middleton, Callum

AU - Dalcanale, Stefano

AU - Uren, Michael

AU - Pomeroy, James

AU - Uren, Michael J

AU - Chang, Josephine

AU - Parke, Justine

AU - Wathuthanthri, Ishan

AU - Nagamatsu, Ken

AU - Salaru, Salat

AU - Kuball, Martin

PY - 2019/7/18

Y1 - 2019/7/18

N2 - Heat extraction from novel GaN/AlGaN superlattice castellated field effect transistors developed as an RF switch is studied. The device thermal resistance was determined as 19.1 ± 0.7 K/(W/mm) from a combination of Raman thermography measurements, and gate resistance thermometry. Finite element simulations were used to predict the peak temperatures and show that the three-dimensional gate structure aids the extraction of heat generated in the channel. The calculated heat flux in the castellations shows that the gate metal provides a high thermal conductivity path, bypassing the lower thermal conductivity superlattice, reducing channel temperatures by as much as 23%.

AB - Heat extraction from novel GaN/AlGaN superlattice castellated field effect transistors developed as an RF switch is studied. The device thermal resistance was determined as 19.1 ± 0.7 K/(W/mm) from a combination of Raman thermography measurements, and gate resistance thermometry. Finite element simulations were used to predict the peak temperatures and show that the three-dimensional gate structure aids the extraction of heat generated in the channel. The calculated heat flux in the castellations shows that the gate metal provides a high thermal conductivity path, bypassing the lower thermal conductivity superlattice, reducing channel temperatures by as much as 23%.

KW - Logic gates

KW - Temperature measurement

KW - Heating systems

KW - Thermal resistance

KW - Thermal conductivity

KW - Superlattices

U2 - 10.1109/LED.2019.2929424

DO - 10.1109/LED.2019.2929424

M3 - Article (Academic Journal)

SN - 0741-3106

VL - 40

SP - 1374

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Thermal transport in Superlattice Castellated Field Effect Transistors

Abstract

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