Thickness dependence of the mobility at the LaAlO3/SrTiO3 interface

C. Bell; S. Harashima; Y. Hikita; H. Y. Hwang; Chris Bell

doi:10.1063/1.3149695

Thickness dependence of the mobility at the LaAlO3/SrTiO3 interface

C. Bell^*, S. Harashima, Y. Hikita, H. Y. Hwang, Chris Bell

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

The electronic transport properties of a series of LaAlO3/SrTiO3 interfaces were investigated, and a systematic thickness dependence of the sheet resistance and magnetoresistance was found for constant growth conditions. This trend occurs above the critical thickness of four unit cells, below which the LaAlO3/SrTiO3 interface is not conducting. A dramatic decrease in mobility of the electron gas of nearly two orders of magnitude was observed with increasing LaAlO3 thickness from 5 to 25 unit cells.

Original language	English
Article number	222111
Number of pages	3
Journal	Applied Physics Letters
Volume	94
Issue number	22
DOIs	https://doi.org/10.1063/1.3149695
Publication status	Published - 1 Jun 2009

Keywords

carrier mobility
electrical resistivity
electron gas
interface structure
lanthanum compounds
magnetoresistance
strontium compounds
OXIDES
STATE

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@article{d9baa8905b524369ad71222a646f6040,

title = "Thickness dependence of the mobility at the LaAlO3/SrTiO3 interface",

abstract = "The electronic transport properties of a series of LaAlO3/SrTiO3 interfaces were investigated, and a systematic thickness dependence of the sheet resistance and magnetoresistance was found for constant growth conditions. This trend occurs above the critical thickness of four unit cells, below which the LaAlO3/SrTiO3 interface is not conducting. A dramatic decrease in mobility of the electron gas of nearly two orders of magnitude was observed with increasing LaAlO3 thickness from 5 to 25 unit cells.",

keywords = "carrier mobility, electrical resistivity, electron gas, interface structure, lanthanum compounds, magnetoresistance, strontium compounds, OXIDES, STATE",

author = "C. Bell and S. Harashima and Y. Hikita and Hwang, {H. Y.} and Chris Bell",

year = "2009",

month = jun,

day = "1",

doi = "10.1063/1.3149695",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

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TY - JOUR

T1 - Thickness dependence of the mobility at the LaAlO3/SrTiO3 interface

AU - Bell, C.

AU - Harashima, S.

AU - Hikita, Y.

AU - Hwang, H. Y.

AU - Bell, Chris

PY - 2009/6/1

Y1 - 2009/6/1

N2 - The electronic transport properties of a series of LaAlO3/SrTiO3 interfaces were investigated, and a systematic thickness dependence of the sheet resistance and magnetoresistance was found for constant growth conditions. This trend occurs above the critical thickness of four unit cells, below which the LaAlO3/SrTiO3 interface is not conducting. A dramatic decrease in mobility of the electron gas of nearly two orders of magnitude was observed with increasing LaAlO3 thickness from 5 to 25 unit cells.

AB - The electronic transport properties of a series of LaAlO3/SrTiO3 interfaces were investigated, and a systematic thickness dependence of the sheet resistance and magnetoresistance was found for constant growth conditions. This trend occurs above the critical thickness of four unit cells, below which the LaAlO3/SrTiO3 interface is not conducting. A dramatic decrease in mobility of the electron gas of nearly two orders of magnitude was observed with increasing LaAlO3 thickness from 5 to 25 unit cells.

KW - carrier mobility

KW - electrical resistivity

KW - electron gas

KW - interface structure

KW - lanthanum compounds

KW - magnetoresistance

KW - strontium compounds

KW - OXIDES

KW - STATE

U2 - 10.1063/1.3149695

DO - 10.1063/1.3149695

M3 - Article (Academic Journal)

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222111

ER -

Thickness dependence of the mobility at the LaAlO3/SrTiO3 interface

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