Time and frequency domain analysis of commercial GaN HEMTs operated in pulsed mode

F Fornetti; MA Beach; KA Morris

doi:10.1109/APMC.2009.5384372

Time and frequency domain analysis of commercial GaN HEMTs operated in pulsed mode

F Fornetti, MA Beach, KA Morris

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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Abstract

The present study investigates the behaviour and performance of commercially available GaN HEMTs when used for the amplification of pulsed waveforms. A method for determining pulse width variations based on the spectrum of the amplified signal is proposed. The changes in rise and fall times are also investigated across the pulse repetition frequency (PRF) range 100-450 kHz. The influence of RF power and bias levels on such parameters is also examined. The aim of the study is to assess the suitability of commercial GaN HEMTs to pulsed RF applications such as Radar. The RF frequency at which the study is conducted is 3.5GHz.

Translated title of the contribution	Time and frequency domain analysis of commercial GaN HEMTs operated in pulsed mode
Original language	English
Title of host publication	IEEE Asia Pacific Microwave Conference, 2009 (APMC 2009), Singapore
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1601 - 1604
Number of pages	4
ISBN (Print)	9781424428014
DOIs	https://doi.org/10.1109/APMC.2009.5384372
Publication status	Published - 21 Sept 2009

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@inproceedings{69fd602599d3489ca91ccacccf9ae34f,

title = "Time and frequency domain analysis of commercial GaN HEMTs operated in pulsed mode",

abstract = "The present study investigates the behaviour and performance of commercially available GaN HEMTs when used for the amplification of pulsed waveforms. A method for determining pulse width variations based on the spectrum of the amplified signal is proposed. The changes in rise and fall times are also investigated across the pulse repetition frequency (PRF) range 100-450 kHz. The influence of RF power and bias levels on such parameters is also examined. The aim of the study is to assess the suitability of commercial GaN HEMTs to pulsed RF applications such as Radar. The RF frequency at which the study is conducted is 3.5GHz.",

author = "F Fornetti and MA Beach and KA Morris",

year = "2009",

month = sep,

day = "21",

doi = "10.1109/APMC.2009.5384372",

language = "English",

isbn = "9781424428014",

pages = "1601 -- 1604",

booktitle = "IEEE Asia Pacific Microwave Conference, 2009 (APMC 2009), Singapore",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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Time and frequency domain analysis of commercial GaN HEMTs operated in pulsed mode. / Fornetti, F ; Beach, MA; Morris, KA.
IEEE Asia Pacific Microwave Conference, 2009 (APMC 2009), Singapore. Institute of Electrical and Electronics Engineers (IEEE), 2009. p. 1601 - 1604.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Time and frequency domain analysis of commercial GaN HEMTs operated in pulsed mode

AU - Fornetti, F

AU - Beach, MA

AU - Morris, KA

PY - 2009/9/21

Y1 - 2009/9/21

N2 - The present study investigates the behaviour and performance of commercially available GaN HEMTs when used for the amplification of pulsed waveforms. A method for determining pulse width variations based on the spectrum of the amplified signal is proposed. The changes in rise and fall times are also investigated across the pulse repetition frequency (PRF) range 100-450 kHz. The influence of RF power and bias levels on such parameters is also examined. The aim of the study is to assess the suitability of commercial GaN HEMTs to pulsed RF applications such as Radar. The RF frequency at which the study is conducted is 3.5GHz.

AB - The present study investigates the behaviour and performance of commercially available GaN HEMTs when used for the amplification of pulsed waveforms. A method for determining pulse width variations based on the spectrum of the amplified signal is proposed. The changes in rise and fall times are also investigated across the pulse repetition frequency (PRF) range 100-450 kHz. The influence of RF power and bias levels on such parameters is also examined. The aim of the study is to assess the suitability of commercial GaN HEMTs to pulsed RF applications such as Radar. The RF frequency at which the study is conducted is 3.5GHz.

U2 - 10.1109/APMC.2009.5384372

DO - 10.1109/APMC.2009.5384372

M3 - Conference Contribution (Conference Proceeding)

SN - 9781424428014

SP - 1601

EP - 1604

BT - IEEE Asia Pacific Microwave Conference, 2009 (APMC 2009), Singapore

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Time and frequency domain analysis of commercial GaN HEMTs operated in pulsed mode

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