Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance

Athikom Manoi; James W. Pomeroy; Richard Lossy; Reza Pazirandeh; Joachim Wuerfl; Michael J. Uren; Trevor Martin; Martin Kuball

doi:10.1016/j.sse.2010.11.002

Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance

Athikom Manoi, James W. Pomeroy, Richard Lossy, Reza Pazirandeh, Joachim Wuerfl, Michael J. Uren, Trevor Martin, Martin Kuball

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

19 Citations (Scopus)

Abstract

The thermal dynamics of multifinger AlGaN/GaN high electron mobility transistors (HEMTs) with varying gate pitch was investigated using time-resolved Raman thermography. An identical temperature rise was measured in all gate fingers within the first similar to 500 ns duration of electrical pulses. Gate finger temperature differences only emerge after 500 ns, due to the onset of thermal crosstalk. This thermal crosstalk onset delay is attributed to the finite rate of heat diffusion between gate fingers. Reducing the device gate pitch was found to increase the magnitude of transient thermal crosstalk. Implications of each gate finger within a multifinger HEMT having a different transient temperature are discussed in the context of device characteristics. The experimental results are compared to time-domain three-dimensional finite difference heat diffusion simulations. (C) 2010 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	14-18
Number of pages	5
Journal	Solid-State Electronics
Volume	57
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2010.11.002
Publication status	Published - Mar 2011

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@article{6e322b810c964e1087eeb7a857b45d68,

title = "Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance",

abstract = "The thermal dynamics of multifinger AlGaN/GaN high electron mobility transistors (HEMTs) with varying gate pitch was investigated using time-resolved Raman thermography. An identical temperature rise was measured in all gate fingers within the first similar to 500 ns duration of electrical pulses. Gate finger temperature differences only emerge after 500 ns, due to the onset of thermal crosstalk. This thermal crosstalk onset delay is attributed to the finite rate of heat diffusion between gate fingers. Reducing the device gate pitch was found to increase the magnitude of transient thermal crosstalk. Implications of each gate finger within a multifinger HEMT having a different transient temperature are discussed in the context of device characteristics. The experimental results are compared to time-domain three-dimensional finite difference heat diffusion simulations. (C) 2010 Elsevier Ltd. All rights reserved.",

author = "Athikom Manoi and Pomeroy, {James W.} and Richard Lossy and Reza Pazirandeh and Joachim Wuerfl and Uren, {Michael J.} and Trevor Martin and Martin Kuball",

year = "2011",

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doi = "10.1016/j.sse.2010.11.002",

language = "English",

volume = "57",

pages = "14--18",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "1",

}

Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance. / Manoi, Athikom; Pomeroy, James W.; Lossy, Richard; Pazirandeh, Reza; Wuerfl, Joachim; Uren, Michael J.; Martin, Trevor; Kuball, Martin.

In: Solid-State Electronics, Vol. 57, No. 1, 03.2011, p. 14-18.

Research output: Contribution to journal › Article (Academic Journal) › peer-review

TY - JOUR

T1 - Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance

AU - Manoi, Athikom

AU - Pomeroy, James W.

AU - Lossy, Richard

AU - Pazirandeh, Reza

AU - Wuerfl, Joachim

AU - Uren, Michael J.

AU - Martin, Trevor

AU - Kuball, Martin

PY - 2011/3

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N2 - The thermal dynamics of multifinger AlGaN/GaN high electron mobility transistors (HEMTs) with varying gate pitch was investigated using time-resolved Raman thermography. An identical temperature rise was measured in all gate fingers within the first similar to 500 ns duration of electrical pulses. Gate finger temperature differences only emerge after 500 ns, due to the onset of thermal crosstalk. This thermal crosstalk onset delay is attributed to the finite rate of heat diffusion between gate fingers. Reducing the device gate pitch was found to increase the magnitude of transient thermal crosstalk. Implications of each gate finger within a multifinger HEMT having a different transient temperature are discussed in the context of device characteristics. The experimental results are compared to time-domain three-dimensional finite difference heat diffusion simulations. (C) 2010 Elsevier Ltd. All rights reserved.

AB - The thermal dynamics of multifinger AlGaN/GaN high electron mobility transistors (HEMTs) with varying gate pitch was investigated using time-resolved Raman thermography. An identical temperature rise was measured in all gate fingers within the first similar to 500 ns duration of electrical pulses. Gate finger temperature differences only emerge after 500 ns, due to the onset of thermal crosstalk. This thermal crosstalk onset delay is attributed to the finite rate of heat diffusion between gate fingers. Reducing the device gate pitch was found to increase the magnitude of transient thermal crosstalk. Implications of each gate finger within a multifinger HEMT having a different transient temperature are discussed in the context of device characteristics. The experimental results are compared to time-domain three-dimensional finite difference heat diffusion simulations. (C) 2010 Elsevier Ltd. All rights reserved.

U2 - 10.1016/j.sse.2010.11.002

DO - 10.1016/j.sse.2010.11.002

M3 - Article (Academic Journal)

VL - 57

SP - 14

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JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

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