Time Resolved Hyperspectral Quantum Rod Thermography of Microelectronic Devices: Temperature Transients in a GaN HEMT

Bahar Öner; James W Pomeroy; Martin Kuball

doi:10.1109/LED.2020.2989919

Time Resolved Hyperspectral Quantum Rod Thermography of Microelectronic Devices: Temperature Transients in a GaN HEMT

Bahar Öner, James W Pomeroy, Martin Kuball

Research output: Contribution to journal › Article (Academic Journal) › peer-review

6 Citations (Scopus)

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Abstract

The trend of miniaturization and rapid progress in the cost-competitive microelectronic industry require high resolution, fast, accurate and cost-effective thermal characterization techniques. These techniques aid the assessment of reliability and performance benchmarking of new device designs for the realistic operation conditions. We present a time resolved, surface sensitive, sub-micron resolution wide field thermal imaging technique, exploiting fast radiative recombination rates of quantum rod photoluminescence to probe temperature transients in semiconductor devices. We demonstrate a time resolution of 20 s on a single finger AlGaN/GaN HEMT. This technique provides an image of the surface temperature transients regardless of the device design/material system under test. The results were verified with transient thermo-reflectance measurements.

Original language	English
Journal	IEEE Electron Device Letters
Early online date	23 Apr 2020
DOIs	https://doi.org/10.1109/LED.2020.2989919
Publication status	E-pub ahead of print - 23 Apr 2020

Research Groups and Themes

CDTR

Keywords

GaN HEMT
hyperspectral quantum rod thermography
thermal metrology
transient self-heating

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10.1109/LED.2020.2989919

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@article{b5587fa9cb8b4bab8c5ab0ac0c26ebe3,

title = "Time Resolved Hyperspectral Quantum Rod Thermography of Microelectronic Devices: Temperature Transients in a GaN HEMT",

abstract = "The trend of miniaturization and rapid progress in the cost-competitive microelectronic industry require high resolution, fast, accurate and cost-effective thermal characterization techniques. These techniques aid the assessment of reliability and performance benchmarking of new device designs for the realistic operation conditions. We present a time resolved, surface sensitive, sub-micron resolution wide field thermal imaging technique, exploiting fast radiative recombination rates of quantum rod photoluminescence to probe temperature transients in semiconductor devices. We demonstrate a time resolution of 20 s on a single finger AlGaN/GaN HEMT. This technique provides an image of the surface temperature transients regardless of the device design/material system under test. The results were verified with transient thermo-reflectance measurements. ",

keywords = "GaN HEMT, hyperspectral quantum rod thermography, thermal metrology, transient self-heating",

author = "Bahar {\"O}ner and Pomeroy, {James W} and Martin Kuball",

year = "2020",

month = apr,

day = "23",

doi = "10.1109/LED.2020.2989919",

language = "English",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

TY - JOUR

T1 - Time Resolved Hyperspectral Quantum Rod Thermography of Microelectronic Devices

T2 - Temperature Transients in a GaN HEMT

AU - Öner, Bahar

AU - Pomeroy, James W

AU - Kuball, Martin

PY - 2020/4/23

Y1 - 2020/4/23

N2 - The trend of miniaturization and rapid progress in the cost-competitive microelectronic industry require high resolution, fast, accurate and cost-effective thermal characterization techniques. These techniques aid the assessment of reliability and performance benchmarking of new device designs for the realistic operation conditions. We present a time resolved, surface sensitive, sub-micron resolution wide field thermal imaging technique, exploiting fast radiative recombination rates of quantum rod photoluminescence to probe temperature transients in semiconductor devices. We demonstrate a time resolution of 20 s on a single finger AlGaN/GaN HEMT. This technique provides an image of the surface temperature transients regardless of the device design/material system under test. The results were verified with transient thermo-reflectance measurements.

AB - The trend of miniaturization and rapid progress in the cost-competitive microelectronic industry require high resolution, fast, accurate and cost-effective thermal characterization techniques. These techniques aid the assessment of reliability and performance benchmarking of new device designs for the realistic operation conditions. We present a time resolved, surface sensitive, sub-micron resolution wide field thermal imaging technique, exploiting fast radiative recombination rates of quantum rod photoluminescence to probe temperature transients in semiconductor devices. We demonstrate a time resolution of 20 s on a single finger AlGaN/GaN HEMT. This technique provides an image of the surface temperature transients regardless of the device design/material system under test. The results were verified with transient thermo-reflectance measurements.

KW - GaN HEMT

KW - hyperspectral quantum rod thermography

KW - thermal metrology

KW - transient self-heating

U2 - 10.1109/LED.2020.2989919

DO - 10.1109/LED.2020.2989919

M3 - Article (Academic Journal)

SN - 0741-3106

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

Time Resolved Hyperspectral Quantum Rod Thermography of Microelectronic Devices: Temperature Transients in a GaN HEMT

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