Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy

M Kuball, G Riedel, JW Pomeroy, A Sarua, MJ Uren, T Martin, KP Hilton, JO Maclean, DJ Wallis

Research output: Contribution to journalArticle (Academic Journal)

100 Citations (Scopus)

Abstract

We report on the development of time-resolved Raman thermography to measure transient temperatures in semiconductor devices with submicrometer spatial resolution. This new technique is illustrated for AlGaN/GaN HFETs and ungated devices grown on SiC and sapphire substrates. A temporal resolution of 200 ns is demonstrated. Temperature changes rapidly within sub-200 ns after switching the devices on or off, followed by a slower change in device temperature with a time constant of similar to ~10 and similar to ~140 mus for AlGaN/GaN devices grown on SiC and sapphire substrates, respectively. Heat diffusion into the device substrate is also demonstrated.
Translated title of the contributionTime-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy
Original languageEnglish
Pages (from-to)86 - 89
Number of pages4
JournalIEEE Electron Device Letters
Volume28 (2)
DOIs
Publication statusPublished - Feb 2007

Bibliographical note

Publisher: IEEE

Structured keywords

  • CDTR

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