Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy

M Kuball; G Riedel; JW Pomeroy; A Sarua; MJ Uren; T Martin; KP Hilton; JO Maclean; DJ Wallis

doi:10.1109/LED.2006.889215

Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy

M Kuball, G Riedel, JW Pomeroy, A Sarua, MJ Uren, T Martin, KP Hilton, JO Maclean, DJ Wallis

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

128 Citations (Scopus)

Abstract

We report on the development of time-resolved Raman thermography to measure transient temperatures in semiconductor devices with submicrometer spatial resolution. This new technique is illustrated for AlGaN/GaN HFETs and ungated devices grown on SiC and sapphire substrates. A temporal resolution of 200 ns is demonstrated. Temperature changes rapidly within sub-200 ns after switching the devices on or off, followed by a slower change in device temperature with a time constant of similar to ~10 and similar to ~140 mus for AlGaN/GaN devices grown on SiC and sapphire substrates, respectively. Heat diffusion into the device substrate is also demonstrated.

Translated title of the contribution	Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy
Original language	English
Pages (from-to)	86 - 89
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	28 (2)
DOIs	https://doi.org/10.1109/LED.2006.889215
Publication status	Published - Feb 2007

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Publisher: IEEE

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NOVEL TIME-RESOLVED THERMAL IMAGING:AIGAN/GAN HETEROSTRUCTURE FILED EFFECT TRANSISTORS
Kuball, M. H. H.
1/07/06 → 1/04/10
Project: Research

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title = "Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy",

abstract = "We report on the development of time-resolved Raman thermography to measure transient temperatures in semiconductor devices with submicrometer spatial resolution. This new technique is illustrated for AlGaN/GaN HFETs and ungated devices grown on SiC and sapphire substrates. A temporal resolution of 200 ns is demonstrated. Temperature changes rapidly within sub-200 ns after switching the devices on or off, followed by a slower change in device temperature with a time constant of similar to ~10 and similar to ~140 mus for AlGaN/GaN devices grown on SiC and sapphire substrates, respectively. Heat diffusion into the device substrate is also demonstrated.",

author = "M Kuball and G Riedel and JW Pomeroy and A Sarua and MJ Uren and T Martin and KP Hilton and JO Maclean and DJ Wallis",

note = "Publisher: IEEE",

year = "2007",

month = feb,

doi = "10.1109/LED.2006.889215",

language = "English",

volume = "28 (2)",

pages = "86 -- 89",

journal = "IEEE Electron Device Letters",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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TY - JOUR

T1 - Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy

AU - Kuball, M

AU - Riedel, G

AU - Pomeroy, JW

AU - Sarua, A

AU - Uren, MJ

AU - Martin, T

AU - Hilton, KP

AU - Maclean, JO

AU - Wallis, DJ

N1 - Publisher: IEEE

PY - 2007/2

Y1 - 2007/2

N2 - We report on the development of time-resolved Raman thermography to measure transient temperatures in semiconductor devices with submicrometer spatial resolution. This new technique is illustrated for AlGaN/GaN HFETs and ungated devices grown on SiC and sapphire substrates. A temporal resolution of 200 ns is demonstrated. Temperature changes rapidly within sub-200 ns after switching the devices on or off, followed by a slower change in device temperature with a time constant of similar to ~10 and similar to ~140 mus for AlGaN/GaN devices grown on SiC and sapphire substrates, respectively. Heat diffusion into the device substrate is also demonstrated.

AB - We report on the development of time-resolved Raman thermography to measure transient temperatures in semiconductor devices with submicrometer spatial resolution. This new technique is illustrated for AlGaN/GaN HFETs and ungated devices grown on SiC and sapphire substrates. A temporal resolution of 200 ns is demonstrated. Temperature changes rapidly within sub-200 ns after switching the devices on or off, followed by a slower change in device temperature with a time constant of similar to ~10 and similar to ~140 mus for AlGaN/GaN devices grown on SiC and sapphire substrates, respectively. Heat diffusion into the device substrate is also demonstrated.

U2 - 10.1109/LED.2006.889215

DO - 10.1109/LED.2006.889215

M3 - Article (Academic Journal)

VL - 28 (2)

SP - 86

EP - 89

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy

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NOVEL TIME-RESOLVED THERMAL IMAGING:AIGAN/GAN HETEROSTRUCTURE FILED EFFECT TRANSISTORS

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