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We report on the development of time-resolved Raman thermography to measure transient temperatures in semiconductor devices with submicrometer spatial resolution. This new technique is illustrated for AlGaN/GaN HFETs and ungated devices grown on SiC and sapphire substrates. A temporal resolution of 200 ns is demonstrated. Temperature changes rapidly within sub-200 ns after switching the devices on or off, followed by a slower change in device temperature with a time constant of similar to ~10 and similar to ~140 mus for AlGaN/GaN devices grown on SiC and sapphire substrates, respectively. Heat diffusion into the device substrate is also demonstrated.
|Translated title of the contribution||Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy|
|Pages (from-to)||86 - 89|
|Number of pages||4|
|Journal||IEEE Electron Device Letters|
|Publication status||Published - Feb 2007|
Bibliographical notePublisher: IEEE