TY - JOUR
T1 - TiO2-based memristors and ReRAM
T2 - Materials, mechanisms and models (a review)
AU - Gale, Ella
PY - 2014/10/1
Y1 - 2014/10/1
N2 - The memristor is the fundamental nonlinear circuit element, with uses in computing and computer memory. Resistive Random Access Memory (ReRAM) is a resistive switching memory proposed as a non-volatile memory. In this review we shall summarize the state of the art for these closely-related fields, concentrating on titanium dioxide, the well-utilized and archetypal material for both. We shall cover material properties, switching mechanisms and models to demonstrate what ReRAM and memristor scientists can learn from each other and examine the outlook for these technologies.
AB - The memristor is the fundamental nonlinear circuit element, with uses in computing and computer memory. Resistive Random Access Memory (ReRAM) is a resistive switching memory proposed as a non-volatile memory. In this review we shall summarize the state of the art for these closely-related fields, concentrating on titanium dioxide, the well-utilized and archetypal material for both. We shall cover material properties, switching mechanisms and models to demonstrate what ReRAM and memristor scientists can learn from each other and examine the outlook for these technologies.
KW - materials
KW - mechanisms
KW - memristive devices
KW - models
KW - ReRAM
UR - http://www.scopus.com/inward/record.url?scp=84907211123&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/29/10/104004
DO - 10.1088/0268-1242/29/10/104004
M3 - Review article (Academic Journal)
AN - SCOPUS:84907211123
SN - 0268-1242
VL - 29
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 10
M1 - 104004
ER -