TiO2-based memristors and ReRAM: Materials, mechanisms and models (a review)

Ella Gale*

*Corresponding author for this work

Research output: Contribution to journalReview article (Academic Journal)

85 Citations (Scopus)

Abstract

The memristor is the fundamental nonlinear circuit element, with uses in computing and computer memory. Resistive Random Access Memory (ReRAM) is a resistive switching memory proposed as a non-volatile memory. In this review we shall summarize the state of the art for these closely-related fields, concentrating on titanium dioxide, the well-utilized and archetypal material for both. We shall cover material properties, switching mechanisms and models to demonstrate what ReRAM and memristor scientists can learn from each other and examine the outlook for these technologies.

Original languageEnglish
Article number104004
JournalSemiconductor Science and Technology
Volume29
Issue number10
DOIs
Publication statusPublished - 1 Oct 2014

Keywords

  • materials
  • mechanisms
  • memristive devices
  • models
  • ReRAM

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