Topographic analysis of silicon nanoparticles-based electroluminescent devices

A. Morales-Sánchez; J. Barreto; C. Domínguez; M. Aceves; K. M. Leyva; J. A. Luna-López; J. Carrillo; J. Pedraza

doi:10.1016/j.mseb.2010.03.030

Topographic analysis of silicon nanoparticles-based electroluminescent devices

A. Morales-Sánchez^*, J. Barreto, C. Domínguez, M. Aceves, K. M. Leyva, J. A. Luna-López, J. Carrillo, J. Pedraza

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

5 Citations (Scopus)

Abstract

Electroluminescent properties of silicon nanoparticles embedded in MOS devices have been studied. Silicon rich oxide (SRO) films with 4 at.% of silicon excess were used as active layers. Intense and stable light emission is observed with the naked eye as shining spots at the surface of devices. AFM measurements on these devices exhibit a remarkably granular surface where the EL spots are observed. The EL measurements show a broad visible spectrum with various peaks between 420 and 870 nm. These EL spots are related with charge injection through conductive paths created by adjacent Si-nps within the SRO.

Original language	English
Pages (from-to)	123-126
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	174
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2010.03.030
Publication status	Published - 25 Oct 2010

Keywords

Conductive paths
Electroluminescence
Metal-oxide semiconductor
Silicon nanoparticles
Silicon rich oxide

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title = "Topographic analysis of silicon nanoparticles-based electroluminescent devices",

abstract = "Electroluminescent properties of silicon nanoparticles embedded in MOS devices have been studied. Silicon rich oxide (SRO) films with 4 at.% of silicon excess were used as active layers. Intense and stable light emission is observed with the naked eye as shining spots at the surface of devices. AFM measurements on these devices exhibit a remarkably granular surface where the EL spots are observed. The EL measurements show a broad visible spectrum with various peaks between 420 and 870 nm. These EL spots are related with charge injection through conductive paths created by adjacent Si-nps within the SRO.",

keywords = "Conductive paths, Electroluminescence, Metal-oxide semiconductor, Silicon nanoparticles, Silicon rich oxide",

author = "A. Morales-S{\'a}nchez and J. Barreto and C. Dom{\'i}nguez and M. Aceves and Leyva, {K. M.} and Luna-L{\'o}pez, {J. A.} and J. Carrillo and J. Pedraza",

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TY - JOUR

T1 - Topographic analysis of silicon nanoparticles-based electroluminescent devices

AU - Morales-Sánchez, A.

AU - Barreto, J.

AU - Domínguez, C.

AU - Aceves, M.

AU - Leyva, K. M.

AU - Luna-López, J. A.

AU - Carrillo, J.

AU - Pedraza, J.

PY - 2010/10/25

Y1 - 2010/10/25

N2 - Electroluminescent properties of silicon nanoparticles embedded in MOS devices have been studied. Silicon rich oxide (SRO) films with 4 at.% of silicon excess were used as active layers. Intense and stable light emission is observed with the naked eye as shining spots at the surface of devices. AFM measurements on these devices exhibit a remarkably granular surface where the EL spots are observed. The EL measurements show a broad visible spectrum with various peaks between 420 and 870 nm. These EL spots are related with charge injection through conductive paths created by adjacent Si-nps within the SRO.

AB - Electroluminescent properties of silicon nanoparticles embedded in MOS devices have been studied. Silicon rich oxide (SRO) films with 4 at.% of silicon excess were used as active layers. Intense and stable light emission is observed with the naked eye as shining spots at the surface of devices. AFM measurements on these devices exhibit a remarkably granular surface where the EL spots are observed. The EL measurements show a broad visible spectrum with various peaks between 420 and 870 nm. These EL spots are related with charge injection through conductive paths created by adjacent Si-nps within the SRO.

KW - Conductive paths

KW - Electroluminescence

KW - Metal-oxide semiconductor

KW - Silicon nanoparticles

KW - Silicon rich oxide

UR - http://www.scopus.com/inward/record.url?scp=77956468892&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2010.03.030

DO - 10.1016/j.mseb.2010.03.030

M3 - Article (Academic Journal)

AN - SCOPUS:77956468892

VL - 174

SP - 123

EP - 126

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

SN - 0921-5107

IS - 1-3

ER -

Topographic analysis of silicon nanoparticles-based electroluminescent devices

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Keywords

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