Topographic analysis of silicon nanoparticles-based electroluminescent devices

A. Morales-Sánchez*, J. Barreto, C. Domínguez, M. Aceves, K. M. Leyva, J. A. Luna-López, J. Carrillo, J. Pedraza

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

5 Citations (Scopus)


Electroluminescent properties of silicon nanoparticles embedded in MOS devices have been studied. Silicon rich oxide (SRO) films with 4 at.% of silicon excess were used as active layers. Intense and stable light emission is observed with the naked eye as shining spots at the surface of devices. AFM measurements on these devices exhibit a remarkably granular surface where the EL spots are observed. The EL measurements show a broad visible spectrum with various peaks between 420 and 870 nm. These EL spots are related with charge injection through conductive paths created by adjacent Si-nps within the SRO.

Original languageEnglish
Pages (from-to)123-126
Number of pages4
JournalMaterials Science and Engineering: B
Issue number1-3
Publication statusPublished - 25 Oct 2010

Structured keywords

  • Photonics and Quantum


  • Conductive paths
  • Electroluminescence
  • Metal-oxide semiconductor
  • Silicon nanoparticles
  • Silicon rich oxide


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