Transfer IV and Threshold Voltage Drift of GaN and SiC Cascode Discrete Devices Under Gate Bias Stress

Yasin Gunaydin; Saeed Jahdi; Xibo Yuan; Bernard Stark; Jose Ortiz-Gonzalez; Erfan Bashar; Olayiwola Alatise; Phil Mellor

doi:10.30420/565822039

Transfer IV and Threshold Voltage Drift of GaN and SiC Cascode Discrete Devices Under Gate Bias Stress

Yasin Gunaydin^*, Saeed Jahdi, Xibo Yuan, Bernard Stark, Jose Ortiz-Gonzalez, Erfan Bashar, Olayiwola Alatise, Phil Mellor

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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Abstract

Gallium Nitride (GaN) and Silicon Carbide (SiC) power cascode devices take advantage of a low-voltage enhancement-mode Silicon power MOSFET coupled with a high-voltage depletion-mode GaN HEMT or SiC JFET to realize high switching frequencies with the intention of avoiding charge trapping and threshold voltage drift in the gate oxide traps of enhancement-mode SiC MOSFETs. Nevertheless, in this paper it will be shown that SiC and GaN cascodes will also suffer from the gate threshold voltage drift when subject to significant electrothermal stress. This is due to charge trapping and the impact of additional leakage current in the high-voltage device and it can lead to permanent degradations.

Original language	English
Title of host publication	PCIM Europe 2022
Subtitle of host publication	International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
Publisher	VDE Verlag
Pages	263-268
Number of pages	6
ISBN (Print)	9783800758227
DOIs	https://doi.org/10.30420/565822039
Publication status	Published - 19 Aug 2022
Event	International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2022 - Nuremberg, Germany Duration: 10 May 2022 → 12 May 2022

Publication series

Name	PCIM Europe Conference Proceedings
ISSN (Electronic)	2191-3358

Conference

Conference	International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2022
Country/Territory	Germany
City	Nuremberg
Period	10/05/22 → 12/05/22

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Publisher Copyright:
© VDE VERLAG GMBH, Berlin, Offenbach.

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10.30420/565822039

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Gunaydin, Y., Jahdi, S., Yuan, X., Stark, B., Ortiz-Gonzalez, J., Bashar, E., Alatise, O., & Mellor, P. (2022). Transfer IV and Threshold Voltage Drift of GaN and SiC Cascode Discrete Devices Under Gate Bias Stress. In PCIM Europe 2022: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (pp. 263-268). (PCIM Europe Conference Proceedings). VDE Verlag. https://doi.org/10.30420/565822039

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abstract = "Gallium Nitride (GaN) and Silicon Carbide (SiC) power cascode devices take advantage of a low-voltage enhancement-mode Silicon power MOSFET coupled with a high-voltage depletion-mode GaN HEMT or SiC JFET to realize high switching frequencies with the intention of avoiding charge trapping and threshold voltage drift in the gate oxide traps of enhancement-mode SiC MOSFETs. Nevertheless, in this paper it will be shown that SiC and GaN cascodes will also suffer from the gate threshold voltage drift when subject to significant electrothermal stress. This is due to charge trapping and the impact of additional leakage current in the high-voltage device and it can lead to permanent degradations.",

author = "Yasin Gunaydin and Saeed Jahdi and Xibo Yuan and Bernard Stark and Jose Ortiz-Gonzalez and Erfan Bashar and Olayiwola Alatise and Phil Mellor",

note = "Publisher Copyright: {\textcopyright} VDE VERLAG GMBH, Berlin, Offenbach.; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2022 ; Conference date: 10-05-2022 Through 12-05-2022",

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Gunaydin, Y, Jahdi, S, Yuan, X, Stark, B, Ortiz-Gonzalez, J, Bashar, E, Alatise, O & Mellor, P 2022, Transfer IV and Threshold Voltage Drift of GaN and SiC Cascode Discrete Devices Under Gate Bias Stress. in PCIM Europe 2022: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. PCIM Europe Conference Proceedings, VDE Verlag, pp. 263-268, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2022, Nuremberg, Germany, 10/05/22. https://doi.org/10.30420/565822039

Transfer IV and Threshold Voltage Drift of GaN and SiC Cascode Discrete Devices Under Gate Bias Stress. / Gunaydin, Yasin; Jahdi, Saeed; Yuan, Xibo et al.
PCIM Europe 2022: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. VDE Verlag, 2022. p. 263-268 (PCIM Europe Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Transfer IV and Threshold Voltage Drift of GaN and SiC Cascode Discrete Devices Under Gate Bias Stress

AU - Gunaydin, Yasin

AU - Jahdi, Saeed

AU - Yuan, Xibo

AU - Stark, Bernard

AU - Ortiz-Gonzalez, Jose

AU - Bashar, Erfan

AU - Alatise, Olayiwola

AU - Mellor, Phil

PY - 2022/8/19

Y1 - 2022/8/19

N2 - Gallium Nitride (GaN) and Silicon Carbide (SiC) power cascode devices take advantage of a low-voltage enhancement-mode Silicon power MOSFET coupled with a high-voltage depletion-mode GaN HEMT or SiC JFET to realize high switching frequencies with the intention of avoiding charge trapping and threshold voltage drift in the gate oxide traps of enhancement-mode SiC MOSFETs. Nevertheless, in this paper it will be shown that SiC and GaN cascodes will also suffer from the gate threshold voltage drift when subject to significant electrothermal stress. This is due to charge trapping and the impact of additional leakage current in the high-voltage device and it can lead to permanent degradations.

AB - Gallium Nitride (GaN) and Silicon Carbide (SiC) power cascode devices take advantage of a low-voltage enhancement-mode Silicon power MOSFET coupled with a high-voltage depletion-mode GaN HEMT or SiC JFET to realize high switching frequencies with the intention of avoiding charge trapping and threshold voltage drift in the gate oxide traps of enhancement-mode SiC MOSFETs. Nevertheless, in this paper it will be shown that SiC and GaN cascodes will also suffer from the gate threshold voltage drift when subject to significant electrothermal stress. This is due to charge trapping and the impact of additional leakage current in the high-voltage device and it can lead to permanent degradations.

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AN - SCOPUS:85131126573

SN - 9783800758227

T3 - PCIM Europe Conference Proceedings

SP - 263

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BT - PCIM Europe 2022

PB - VDE Verlag

T2 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2022

Y2 - 10 May 2022 through 12 May 2022

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Gunaydin Y, Jahdi S, Yuan X, Stark B, Ortiz-Gonzalez J, Bashar E et al. Transfer IV and Threshold Voltage Drift of GaN and SiC Cascode Discrete Devices Under Gate Bias Stress. In PCIM Europe 2022: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. VDE Verlag. 2022. p. 263-268. (PCIM Europe Conference Proceedings). doi: 10.30420/565822039

Transfer IV and Threshold Voltage Drift of GaN and SiC Cascode Discrete Devices Under Gate Bias Stress

Abstract

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Analysis of Performance and Reliability of Sub-kV SiC and GaN Cascode Power Electronic Devices

Cite this

Transfer IV and Threshold Voltage Drift of GaN and SiC Cascode Discrete Devices Under Gate Bias Stress

Abstract

Publication series

Conference

Bibliographical note

Access to Document

Handle.net

Other files and links

Fingerprint

Student theses

Analysis of Performance and Reliability of Sub-kV SiC and GaN Cascode Power Electronic Devices

Cite this