Abstract
Transient thermoreflectance measurements were demonstrated as a reliable technique for the thermal assessment of pulsed-operated HEMTs. Thermal modelling and time-resolved micro-Raman thermography were used for the determination of thermoreflectance coefficients of the metal contacts under study. The need of the extraction of the thermoreflectance coefficient value for each metal present at the device was demonstrated.
Original language | English |
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Title of host publication | CS MANTECH 2016 |
Subtitle of host publication | International Conference on Compound Semiconductor Manufacturing Technology |
Publisher | CS Mantech |
Pages | 283-286 |
Number of pages | 4 |
Publication status | Published - 17 May 2016 |
Event | 31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 - Miami, United States Duration: 16 May 2016 → 19 May 2016 |
Conference
Conference | 31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 |
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Country/Territory | United States |
City | Miami |
Period | 16/05/16 → 19/05/16 |
Structured keywords
- CDTR
Keywords
- HEMT
- GaN
- self-heating
- transient thermoreflectance
- time-resolved Raman
- thermal modelling