Transient thermoreflectance for device temperature assessment in pulsed-operated GaN-based HEMTs

Sara Martin Horcajo, James W Pomeroy, Benoit Lambert, Helmut Jung, Hervé Blanck, Martin Kuball

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

117 Downloads (Pure)

Abstract

Transient thermoreflectance measurements were demonstrated as a reliable technique for the thermal assessment of pulsed-operated HEMTs. Thermal modelling and time-resolved micro-Raman thermography were used for the determination of thermoreflectance coefficients of the metal contacts under study. The need of the extraction of the thermoreflectance coefficient value for each metal present at the device was demonstrated.
Original languageEnglish
Title of host publicationCS MANTECH 2016
Subtitle of host publicationInternational Conference on Compound Semiconductor Manufacturing Technology
PublisherCS Mantech
Pages283-286
Number of pages4
Publication statusPublished - 17 May 2016
Event31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 - Miami, United States
Duration: 16 May 201619 May 2016

Conference

Conference31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016
CountryUnited States
CityMiami
Period16/05/1619/05/16

Structured keywords

  • CDTR

Keywords

  • HEMT
  • GaN
  • self-heating
  • transient thermoreflectance
  • time-resolved Raman
  • thermal modelling

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