Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-based HEMTs

Sara Martin Horcajo; James Pomeroy; Benoit  Lambert; Helmut Jung; Herve Blanck; Martin Kuball

doi:10.1109/LED.2016.2595400

Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-based HEMTs

Sara Martin Horcajo, James Pomeroy, Benoit Lambert, Helmut Jung, Herve Blanck, Martin Kuball

School of Physics

Research output: Contribution to journal › Letter (Academic Journal) › peer-review

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Abstract

An experimental method to measure the gate metal temperature of GaN-based HEMTs is demonstrated. The technique is based on transient thermoreflectance measurements performed from the backside of the device. The thermoreflectance coefficient of the gate metal was calibrated by correlating the relative change of its optical reflectivity with the temperature change measured in the GaN layer using time-resolved Raman thermography during the device cooling transient. Simulated temperature transients were in good agreement with the experimental data. The main advantage of this new method is that it enables the direct assessment of gate metal temperature under device pulsed operation regardless of the device design.

Original language	English
Pages (from-to)	1197-1200
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	9
DOIs	https://doi.org/10.1109/LED.2016.2595400
Publication status	Published - 27 Jul 2016

Research Groups and Themes

CDTR

Keywords

GaN
HEMT
Self-heating
Time resolved Raman thermography
Transient thermoreflectance
Gate temperature

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10.1109/LED.2016.2595400

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title = "Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-based HEMTs",

abstract = "An experimental method to measure the gate metal temperature of GaN-based HEMTs is demonstrated. The technique is based on transient thermoreflectance measurements performed from the backside of the device. The thermoreflectance coefficient of the gate metal was calibrated by correlating the relative change of its optical reflectivity with the temperature change measured in the GaN layer using time-resolved Raman thermography during the device cooling transient. Simulated temperature transients were in good agreement with the experimental data. The main advantage of this new method is that it enables the direct assessment of gate metal temperature under device pulsed operation regardless of the device design.",

keywords = "GaN, HEMT, Self-heating, Time resolved Raman thermography, Transient thermoreflectance, Gate temperature",

author = "{Martin Horcajo}, Sara and James Pomeroy and Benoit Lambert and Helmut Jung and Herve Blanck and Martin Kuball",

year = "2016",

month = jul,

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doi = "10.1109/LED.2016.2595400",

language = "English",

volume = "37",

pages = "1197--1200",

journal = "IEEE Electron Device Letters",

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T1 - Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-based HEMTs

AU - Martin Horcajo, Sara

AU - Pomeroy, James

AU - Lambert, Benoit

AU - Jung, Helmut

AU - Blanck, Herve

AU - Kuball, Martin

PY - 2016/7/27

Y1 - 2016/7/27

N2 - An experimental method to measure the gate metal temperature of GaN-based HEMTs is demonstrated. The technique is based on transient thermoreflectance measurements performed from the backside of the device. The thermoreflectance coefficient of the gate metal was calibrated by correlating the relative change of its optical reflectivity with the temperature change measured in the GaN layer using time-resolved Raman thermography during the device cooling transient. Simulated temperature transients were in good agreement with the experimental data. The main advantage of this new method is that it enables the direct assessment of gate metal temperature under device pulsed operation regardless of the device design.

AB - An experimental method to measure the gate metal temperature of GaN-based HEMTs is demonstrated. The technique is based on transient thermoreflectance measurements performed from the backside of the device. The thermoreflectance coefficient of the gate metal was calibrated by correlating the relative change of its optical reflectivity with the temperature change measured in the GaN layer using time-resolved Raman thermography during the device cooling transient. Simulated temperature transients were in good agreement with the experimental data. The main advantage of this new method is that it enables the direct assessment of gate metal temperature under device pulsed operation regardless of the device design.

KW - GaN

KW - HEMT

KW - Self-heating

KW - Time resolved Raman thermography

KW - Transient thermoreflectance

KW - Gate temperature

U2 - 10.1109/LED.2016.2595400

DO - 10.1109/LED.2016.2595400

M3 - Letter (Academic Journal)

SN - 0741-3106

VL - 37

SP - 1197

EP - 1200

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-based HEMTs

Abstract

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