Transport behavior of holes in boron delta-doped diamond structures

R. S. Balmer; I. Friel; S. Hepplestone; J. Isberg; Michael Uren; M. L. Markham; N. L. Palmer; J. Pilkington; P. Huggett; S. Majdi; R. Lang

doi:10.1063/1.4775814

Transport behavior of holes in boron delta-doped diamond structures

R. S. Balmer, I. Friel, S. Hepplestone, J. Isberg, Michael Uren, M. L. Markham, N. L. Palmer, J. Pilkington, P. Huggett, S. Majdi, R. Lang

School of Physics

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Abstract

Boron delta-doped diamond structures have been synthesized using microwave plasma chemical vapor deposition and fabricated into FET and gated Hall bar devices for assessment of the electrical characteristics. A detailed study of variable temperature Hall, conductivity, and field-effect mobility measurements was completed. This was supported by Schrodinger-Poisson and relaxation time calculations based upon application of Fermi's golden rule. A two carrier-type model was developed with an activation energy of similar to 0.2 eV between the delta layer lowest subband with mobility similar to 1 cm(2)/Vs and the bulk valence band with high mobility. This new understanding of the transport of holes in such boron delta-doped structures has shown that although Hall mobility as high as 900 cm(2)/Vs was measured at room temperature, this dramatically overstates the actual useful performance of the device. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775814]

Original language	English
Article number	033702
Number of pages	10
Journal	Journal of Applied Physics
Volume	113
Issue number	3
DOIs	https://doi.org/10.1063/1.4775814
Publication status	Published - 16 Jan 2013

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Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 113, 033702 (2013), and may be found at http://dx.doi.org/10.1063/1.4775814
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title = "Transport behavior of holes in boron delta-doped diamond structures",

abstract = "Boron delta-doped diamond structures have been synthesized using microwave plasma chemical vapor deposition and fabricated into FET and gated Hall bar devices for assessment of the electrical characteristics. A detailed study of variable temperature Hall, conductivity, and field-effect mobility measurements was completed. This was supported by Schrodinger-Poisson and relaxation time calculations based upon application of Fermi's golden rule. A two carrier-type model was developed with an activation energy of similar to 0.2 eV between the delta layer lowest subband with mobility similar to 1 cm(2)/Vs and the bulk valence band with high mobility. This new understanding of the transport of holes in such boron delta-doped structures has shown that although Hall mobility as high as 900 cm(2)/Vs was measured at room temperature, this dramatically overstates the actual useful performance of the device. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775814]",

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T1 - Transport behavior of holes in boron delta-doped diamond structures

AU - Balmer, R. S.

AU - Friel, I.

AU - Hepplestone, S.

AU - Isberg, J.

AU - Uren, Michael

AU - Markham, M. L.

AU - Palmer, N. L.

AU - Pilkington, J.

AU - Huggett, P.

AU - Majdi, S.

AU - Lang, R.

PY - 2013/1/16

Y1 - 2013/1/16

N2 - Boron delta-doped diamond structures have been synthesized using microwave plasma chemical vapor deposition and fabricated into FET and gated Hall bar devices for assessment of the electrical characteristics. A detailed study of variable temperature Hall, conductivity, and field-effect mobility measurements was completed. This was supported by Schrodinger-Poisson and relaxation time calculations based upon application of Fermi's golden rule. A two carrier-type model was developed with an activation energy of similar to 0.2 eV between the delta layer lowest subband with mobility similar to 1 cm(2)/Vs and the bulk valence band with high mobility. This new understanding of the transport of holes in such boron delta-doped structures has shown that although Hall mobility as high as 900 cm(2)/Vs was measured at room temperature, this dramatically overstates the actual useful performance of the device. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775814]

AB - Boron delta-doped diamond structures have been synthesized using microwave plasma chemical vapor deposition and fabricated into FET and gated Hall bar devices for assessment of the electrical characteristics. A detailed study of variable temperature Hall, conductivity, and field-effect mobility measurements was completed. This was supported by Schrodinger-Poisson and relaxation time calculations based upon application of Fermi's golden rule. A two carrier-type model was developed with an activation energy of similar to 0.2 eV between the delta layer lowest subband with mobility similar to 1 cm(2)/Vs and the bulk valence band with high mobility. This new understanding of the transport of holes in such boron delta-doped structures has shown that although Hall mobility as high as 900 cm(2)/Vs was measured at room temperature, this dramatically overstates the actual useful performance of the device. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775814]

U2 - 10.1063/1.4775814

DO - 10.1063/1.4775814

M3 - Article (Academic Journal)

SN - 0021-8979

VL - 113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

M1 - 033702

ER -

Transport behavior of holes in boron delta-doped diamond structures

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