Transport behavior of holes in boron delta-doped diamond structures

R. S. Balmer, I. Friel, S. Hepplestone, J. Isberg, Michael Uren, M. L. Markham, N. L. Palmer, J. Pilkington, P. Huggett, S. Majdi, R. Lang

Research output: Contribution to journalArticle (Academic Journal)peer-review

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Boron delta-doped diamond structures have been synthesized using microwave plasma chemical vapor deposition and fabricated into FET and gated Hall bar devices for assessment of the electrical characteristics. A detailed study of variable temperature Hall, conductivity, and field-effect mobility measurements was completed. This was supported by Schrodinger-Poisson and relaxation time calculations based upon application of Fermi's golden rule. A two carrier-type model was developed with an activation energy of similar to 0.2 eV between the delta layer lowest subband with mobility similar to 1 cm(2)/Vs and the bulk valence band with high mobility. This new understanding of the transport of holes in such boron delta-doped structures has shown that although Hall mobility as high as 900 cm(2)/Vs was measured at room temperature, this dramatically overstates the actual useful performance of the device. (C) 2013 American Institute of Physics. []
Original languageEnglish
Article number 033702
Number of pages10
JournalJournal of Applied Physics
Issue number3
Publication statusPublished - 16 Jan 2013


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