Tuning band alignment using interface dipoles at the Pt/anatase TiO2 interface

T. Tachikawa; Makoto Minohara; Chris Bell; HY Hwang

doi:10.1002/adma.201503339

Tuning band alignment using interface dipoles at the Pt/anatase TiO₂ interface

T. Tachikawa
, Makoto Minohara
, Chris Bell
, HY Hwang

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

18 Citations (Scopus)

474 Downloads (Pure)

Abstract

The Schottky barrier heights at the Pt/TiO₂ (001) junctions are modulated over 0.8 eV by inserting <1 nm of LaAlO₃. The large electric field in the LaAlO₃ is stabilized by preserving the continuity of in-plane lattice symmetry at the oxide interface. These results greatly expand the application of dipole engineering to versatile polycrystalline metal/binary oxide functional interfaces.

Original language	English
Pages (from-to)	7458-7461
Number of pages	4
Journal	Advanced Materials
Volume	27
Issue number	45
Early online date	27 Oct 2015
DOIs	https://doi.org/10.1002/adma.201503339
Publication status	Published - 2 Dec 2015

Keywords

transition metal oxides
TiO2
band alignment
interface dipoles
LaAlO3

Access to Document

10.1002/adma.201503339

TiO2Dipole_final
This is the accepted version of the following article: Tachikawa, T., Minohara, M., Hikita, Y., Bell, C. and Hwang, H. Y. (2015), Tuning Band Alignment Using Interface Dipoles at the Pt/Anatase TiO2 Interface. Adv. Mater., 27: 7458–7461, which has been published in final form at doi: 10.1002/adma.20150333.
Accepted author manuscript, 609 KB

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Cite this

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title = "Tuning band alignment using interface dipoles at the Pt/anatase TiO2 interface",

abstract = "The Schottky barrier heights at the Pt/TiO2 (001) junctions are modulated over 0.8 eV by inserting <1 nm of LaAlO3. The large electric field in the LaAlO3 is stabilized by preserving the continuity of in-plane lattice symmetry at the oxide interface. These results greatly expand the application of dipole engineering to versatile polycrystalline metal/binary oxide functional interfaces. ",

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AU - Tachikawa, T.

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AU - Bell, Chris

AU - Hwang, HY

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AB - The Schottky barrier heights at the Pt/TiO2 (001) junctions are modulated over 0.8 eV by inserting <1 nm of LaAlO3. The large electric field in the LaAlO3 is stabilized by preserving the continuity of in-plane lattice symmetry at the oxide interface. These results greatly expand the application of dipole engineering to versatile polycrystalline metal/binary oxide functional interfaces.

KW - transition metal oxides

KW - TiO2

KW - band alignment

KW - interface dipoles

KW - LaAlO3

U2 - 10.1002/adma.201503339

DO - 10.1002/adma.201503339

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