Tuning the Electron Gas at an Oxide Heterointerface via Free Surface Charges

Yanwu Xie; Christopher Bell; Yasuyuki Hikita; Harold Y. Hwang; Chris Bell

doi:10.1002/adma.201004673

Tuning the Electron Gas at an Oxide Heterointerface via Free Surface Charges

Yanwu Xie
, Christopher Bell
, Yasuyuki Hikita
, Harold Y. Hwang^*
, Chris Bell

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

60 Citations (Scopus)

Abstract

Stable and polarity-switchable free charges are written on the surface of a LaAlO(3)/SrTiO(3) heterostructure using conducting atomic force microscopy. These charges reversibly tune the conductance at the LaAlO(3)/SrTiO(3) interface in a non-volatile way. The modulation in carrier density is large, approximate to 3 x 10(13) cm(-2), comparable to the maximum modulation achieved by the normal field effect.

Original language	English
Pages (from-to)	1744-+
Number of pages	5
Journal	Advanced Materials
Volume	23
Issue number	15
DOIs	https://doi.org/10.1002/adma.201004673
Publication status	Published - 19 Apr 2011

Keywords

INTERFACES
STATE
FILMS

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title = "Tuning the Electron Gas at an Oxide Heterointerface via Free Surface Charges",

abstract = "Stable and polarity-switchable free charges are written on the surface of a LaAlO(3)/SrTiO(3) heterostructure using conducting atomic force microscopy. These charges reversibly tune the conductance at the LaAlO(3)/SrTiO(3) interface in a non-volatile way. The modulation in carrier density is large, approximate to 3 x 10(13) cm(-2), comparable to the maximum modulation achieved by the normal field effect.",

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author = "Yanwu Xie and Christopher Bell and Yasuyuki Hikita and Hwang, \{Harold Y.\} and Chris Bell",

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doi = "10.1002/adma.201004673",

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T1 - Tuning the Electron Gas at an Oxide Heterointerface via Free Surface Charges

AU - Xie, Yanwu

AU - Bell, Christopher

AU - Hikita, Yasuyuki

AU - Hwang, Harold Y.

AU - Bell, Chris

PY - 2011/4/19

Y1 - 2011/4/19

N2 - Stable and polarity-switchable free charges are written on the surface of a LaAlO(3)/SrTiO(3) heterostructure using conducting atomic force microscopy. These charges reversibly tune the conductance at the LaAlO(3)/SrTiO(3) interface in a non-volatile way. The modulation in carrier density is large, approximate to 3 x 10(13) cm(-2), comparable to the maximum modulation achieved by the normal field effect.

AB - Stable and polarity-switchable free charges are written on the surface of a LaAlO(3)/SrTiO(3) heterostructure using conducting atomic force microscopy. These charges reversibly tune the conductance at the LaAlO(3)/SrTiO(3) interface in a non-volatile way. The modulation in carrier density is large, approximate to 3 x 10(13) cm(-2), comparable to the maximum modulation achieved by the normal field effect.

KW - INTERFACES

KW - STATE

KW - FILMS

U2 - 10.1002/adma.201004673

DO - 10.1002/adma.201004673

M3 - Article (Academic Journal)

C2 - 21400617

SN - 0935-9648

VL - 23

SP - 1744-+

JO - Advanced Materials

JF - Advanced Materials

IS - 15

ER -

Tuning the Electron Gas at an Oxide Heterointerface via Free Surface Charges

Abstract

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