Turn-On Voltage Instability of β-Ga2O3 Trench Schottky Barrier Diodes With Different Fin Channel Orientations

Hyun-Seop Kim; Aditya Bhat Kundapura; Matthew D Smith; Martin H H Kuball

doi:10.1109/TED.2024.3393941

Turn-On Voltage Instability of β-Ga₂O₃ Trench Schottky Barrier Diodes With Different Fin Channel Orientations

Hyun-Seop Kim^*, Aditya Bhat Kundapura, Matthew D Smith, Martin H H Kuball^*

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

6 Citations (Scopus)

Abstract

Turn-on voltage instability of beta-gallium oxide ( β -Ga₂O₃) vertical trench Schottky barrier diodes (SBDs) with different fin-channel orientations was investigated. Fins oriented along the [010] direction exhibited the highest turn-on voltage stability and the smallest hysteresis, while fin channels oriented along the [100] direction exhibited the greatest instability. This study suggests that charge trapping at the sidewalls of β -Ga₂O₃ trench SBDs differs based on the fin channel orientation and that fin channels oriented along the [010] direction possess the best electrical characteristics and reliability.

Original language	English
Pages (from-to)	3609 - 3613
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	71
Issue number	6
Early online date	2 May 2024
DOIs	https://doi.org/10.1109/TED.2024.3393941
Publication status	Published - 1 Jun 2024

Research Groups and Themes

CDTR

Keywords

Charge trapping
gallium oxide
instability
power device
Schottky barrier diode (SBD)
turn-on voltage

Access to Document

10.1109/TED.2024.3393941

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Cite this

@article{33b16570cb7e4462956236645b4959a1,

title = "Turn-On Voltage Instability of β-Ga2O3 Trench Schottky Barrier Diodes With Different Fin Channel Orientations",

abstract = "Turn-on voltage instability of beta-gallium oxide ( β -Ga2O3) vertical trench Schottky barrier diodes (SBDs) with different fin-channel orientations was investigated. Fins oriented along the [010] direction exhibited the highest turn-on voltage stability and the smallest hysteresis, while fin channels oriented along the [100] direction exhibited the greatest instability. This study suggests that charge trapping at the sidewalls of β -Ga2O3 trench SBDs differs based on the fin channel orientation and that fin channels oriented along the [010] direction possess the best electrical characteristics and reliability.",

keywords = "Charge trapping, gallium oxide, instability, power device, Schottky barrier diode (SBD), turn-on voltage",

author = "Hyun-Seop Kim and {Bhat Kundapura}, Aditya and Smith, {Matthew D} and Kuball, {Martin H H}",

year = "2024",

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doi = "10.1109/TED.2024.3393941",

language = "English",

volume = "71",

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journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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TY - JOUR

T1 - Turn-On Voltage Instability of β-Ga2O3 Trench Schottky Barrier Diodes With Different Fin Channel Orientations

AU - Kim, Hyun-Seop

AU - Bhat Kundapura, Aditya

AU - Smith, Matthew D

AU - Kuball, Martin H H

PY - 2024/6/1

Y1 - 2024/6/1

N2 - Turn-on voltage instability of beta-gallium oxide ( β -Ga2O3) vertical trench Schottky barrier diodes (SBDs) with different fin-channel orientations was investigated. Fins oriented along the [010] direction exhibited the highest turn-on voltage stability and the smallest hysteresis, while fin channels oriented along the [100] direction exhibited the greatest instability. This study suggests that charge trapping at the sidewalls of β -Ga2O3 trench SBDs differs based on the fin channel orientation and that fin channels oriented along the [010] direction possess the best electrical characteristics and reliability.

AB - Turn-on voltage instability of beta-gallium oxide ( β -Ga2O3) vertical trench Schottky barrier diodes (SBDs) with different fin-channel orientations was investigated. Fins oriented along the [010] direction exhibited the highest turn-on voltage stability and the smallest hysteresis, while fin channels oriented along the [100] direction exhibited the greatest instability. This study suggests that charge trapping at the sidewalls of β -Ga2O3 trench SBDs differs based on the fin channel orientation and that fin channels oriented along the [010] direction possess the best electrical characteristics and reliability.

KW - Charge trapping

KW - gallium oxide

KW - instability

KW - power device

KW - Schottky barrier diode (SBD)

KW - turn-on voltage

U2 - 10.1109/TED.2024.3393941

DO - 10.1109/TED.2024.3393941

M3 - Article (Academic Journal)

SN - 0018-9383

VL - 71

SP - 3609

EP - 3613

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -