TY - GEN
T1 - Type-II GaAs 1-x Bi x /GaN y As 1-y "W" quantum wells for strain-compensated GaAs-based telecom lasers
AU - Davidson, Zoe
PY - 2021/11/26
Y1 - 2021/11/26
N2 - We discuss a new class of type-II quantum wells (QWs) that exploit the impact of Bi and N on the GaAs band-structure. Via growth, experiment, and theoretical calculations we highlight the properties of GaAs 1 xBi x /GaN y As 1-y "W" QWs, demonstrating a potential pathway to uncooled telecom-wavelength laser operation.
AB - We discuss a new class of type-II quantum wells (QWs) that exploit the impact of Bi and N on the GaAs band-structure. Via growth, experiment, and theoretical calculations we highlight the properties of GaAs 1 xBi x /GaN y As 1-y "W" QWs, demonstrating a potential pathway to uncooled telecom-wavelength laser operation.
UR - https://www.researchgate.net/publication/352837818_Type-II_GaAs_1-x_Bi_x_GaN_y_As_1-y_W_quantum_wells_for_strain-compensated_GaAs-based_telecom_lasers
U2 - 10.1109/ISLC51662.2021.9615882
DO - 10.1109/ISLC51662.2021.9615882
M3 - Conference Contribution (Conference Proceeding)
SN - 9781665430944
T3 - Conference digest (IEEE International Semiconductor Laser Conference
BT - International Semiconductor Laser Conference (ISLC)
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -