Ultra-compact III-V-on-Si photonic crystal memory for flip-flop operation at 5 Gb/s

D. Fitsios; T. Alexoudi; A. Bazin; P. Monnier; R. Raj; A. Miliou; G. T. Kanellos; N. Pleros; F. Raineri

doi:10.1364/OE.24.004270

Ultra-compact III-V-on-Si photonic crystal memory for flip-flop operation at 5 Gb/s

D. Fitsios, T. Alexoudi, A. Bazin, P. Monnier, R. Raj, A. Miliou, G. T. Kanellos, N. Pleros, F. Raineri

Research output: Contribution to journal › Article (Academic Journal) › peer-review

34 Citations (Scopus)

Abstract

We report on a photonic crystal (PhC) nanolaser based on the heterogeneous integration of a III-V PhC nanocavity on SOI, configured to operate as a Set-Reset Flip-Flop (SR-FF). The active layer is a nanobeam cavity made of a 650nm × 285nm InP-based wire waveguide evanescently coupled to 500nm × 220nm SOI wire waveguides, demonstrating a record-low footprint of only 6.2μm². Injection locking enables optical bistability allowing for memory operation with only 6.4fJ/bit switching energies and <50ps response times. Bit-level SR-FF memory operation was evaluated at 5Gb/s with PRBS-resembling data patterns, revealing error free operation with a negative power penalty.

Original language	English
Pages (from-to)	4270-4277
Number of pages	8
Journal	Optics Express
Volume	24
Issue number	4
DOIs	https://doi.org/10.1364/OE.24.004270
Publication status	Published - 22 Feb 2016

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title = "Ultra-compact III-V-on-Si photonic crystal memory for flip-flop operation at 5 Gb/s",

abstract = "We report on a photonic crystal (PhC) nanolaser based on the heterogeneous integration of a III-V PhC nanocavity on SOI, configured to operate as a Set-Reset Flip-Flop (SR-FF). The active layer is a nanobeam cavity made of a 650nm × 285nm InP-based wire waveguide evanescently coupled to 500nm × 220nm SOI wire waveguides, demonstrating a record-low footprint of only 6.2μm2. Injection locking enables optical bistability allowing for memory operation with only 6.4fJ/bit switching energies and <50ps response times. Bit-level SR-FF memory operation was evaluated at 5Gb/s with PRBS-resembling data patterns, revealing error free operation with a negative power penalty.",

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T1 - Ultra-compact III-V-on-Si photonic crystal memory for flip-flop operation at 5 Gb/s

AU - Fitsios, D.

AU - Alexoudi, T.

AU - Bazin, A.

AU - Monnier, P.

AU - Raj, R.

AU - Miliou, A.

AU - Kanellos, G. T.

AU - Pleros, N.

AU - Raineri, F.

PY - 2016/2/22

Y1 - 2016/2/22

N2 - We report on a photonic crystal (PhC) nanolaser based on the heterogeneous integration of a III-V PhC nanocavity on SOI, configured to operate as a Set-Reset Flip-Flop (SR-FF). The active layer is a nanobeam cavity made of a 650nm × 285nm InP-based wire waveguide evanescently coupled to 500nm × 220nm SOI wire waveguides, demonstrating a record-low footprint of only 6.2μm2. Injection locking enables optical bistability allowing for memory operation with only 6.4fJ/bit switching energies and <50ps response times. Bit-level SR-FF memory operation was evaluated at 5Gb/s with PRBS-resembling data patterns, revealing error free operation with a negative power penalty.

AB - We report on a photonic crystal (PhC) nanolaser based on the heterogeneous integration of a III-V PhC nanocavity on SOI, configured to operate as a Set-Reset Flip-Flop (SR-FF). The active layer is a nanobeam cavity made of a 650nm × 285nm InP-based wire waveguide evanescently coupled to 500nm × 220nm SOI wire waveguides, demonstrating a record-low footprint of only 6.2μm2. Injection locking enables optical bistability allowing for memory operation with only 6.4fJ/bit switching energies and <50ps response times. Bit-level SR-FF memory operation was evaluated at 5Gb/s with PRBS-resembling data patterns, revealing error free operation with a negative power penalty.

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SN - 1094-4087

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EP - 4277

JO - Optics Express

JF - Optics Express

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ER -

Ultra-compact III-V-on-Si photonic crystal memory for flip-flop operation at 5 Gb/s

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