Ultra-compact III-V-on-Si photonic crystal memory for flip-flop operation at 5 Gb/s

D. Fitsios, T. Alexoudi, A. Bazin, P. Monnier, R. Raj, A. Miliou, G. T. Kanellos, N. Pleros, F. Raineri

Research output: Contribution to journalArticle (Academic Journal)peer-review

14 Citations (Scopus)


We report on a photonic crystal (PhC) nanolaser based on the heterogeneous integration of a III-V PhC nanocavity on SOI, configured to operate as a Set-Reset Flip-Flop (SR-FF). The active layer is a nanobeam cavity made of a 650nm × 285nm InP-based wire waveguide evanescently coupled to 500nm × 220nm SOI wire waveguides, demonstrating a record-low footprint of only 6.2μm2. Injection locking enables optical bistability allowing for memory operation with only 6.4fJ/bit switching energies and <50ps response times. Bit-level SR-FF memory operation was evaluated at 5Gb/s with PRBS-resembling data patterns, revealing error free operation with a negative power penalty.

Original languageEnglish
Pages (from-to)4270-4277
Number of pages8
JournalOptics Express
Issue number4
Publication statusPublished - 22 Feb 2016


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