Unclamped inductive stressing of GaN and SiC Cascode power devices to failure at elevated temperatures

Yasin Gunaydin*, Saeed Jahdi, Xibo Yuan, Renze Yu, Chengjun Shen, Sai Priya Munagala, Andrew N Hopkins, Nick Simpson, Mana Hosseinzadehlish, Jose Ortiz-Gonzalez, Olayiwola Alatise

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

1 Citation (Scopus)
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Abstract

In this paper, the ruggedness performance of GaN HEMT and SiC JFET devices in cascode configuration with a low voltage silicon power MOSFET has been evaluated experimentally. The impact of the bus voltage on the drain current and avalanche energy are investigated as well as the temperature sweep to enable analysis of the alternation of these parameters on the Unclamped Inductive Switching (UIS) ruggedness of cascode devices. The experimental measurements show that the GaN cascode devices have lower avalanche energy rating when compared with the closely rated SiC cascode devices just before the failure. SiC cascode devices can also withstand higher bus voltage in comparison to GaN cascode devices when under electrothermal stress by unclamped inductive switching. The analysis of transfer characteristics and leakage current of SiC JFET & GaN HEMT cascode structures following UIS stress have also been performed together with Computed Tomography (CT) Scan imaging to determine the per-area avalanche energy density.
Original languageEnglish
Article number114711
Number of pages7
JournalMicroelectronics Reliability
Volume138
Early online date25 Sept 2022
DOIs
Publication statusPublished - 1 Nov 2022

Bibliographical note

Funding Information:
This work is supported by the EPSRC Supergen Energy Networks Grant EP/S00078X/2. CT data were obtained at the XTM Facility, Palaeobiology Research Group, University of Bristol.

Funding Information:
This work is supported by the EPSRC Supergen Energy Networks Grant EP/S00078X/2 . CT data were obtained at the XTM Facility, Palaeobiology Research Group, University of Bristol.

Publisher Copyright:
© 2022 The Authors

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