Unveiling the mechanisms of the spin Hall effect in Ta

Edurne Sagasta, Yasumoto Omori, Saül Vélez, Roger Llopis, Christopper Tollan, Andrey Chuvilin, Luis E. Hueso, Martin Gradhand, Yoshichika Otani, Fèlix Casanova*

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

29 Citations (Scopus)
1 Downloads (Pure)

Abstract

Spin-to-charge current interconversions are widely exploited for the generation and detection of pure spin currents and are key ingredients for future spintronic devices including spin-orbit torques and spin-orbit logic circuits. In the case of the spin Hall effect, different mechanisms contribute to the phenomenon and determining the leading contribution is peremptory for achieving the largest conversion efficiencies. Here, we experimentally demonstrate the dominance of the intrinsic mechanism of the spin Hall effect in highly resistive Ta. We obtain an intrinsic spin Hall conductivity for β-Ta of -820±120(/e)Ω-1cm-1 from spin absorption experiments in a large set of lateral spin valve devices. The predominance of the intrinsic mechanism in Ta allows us to linearly enhance the spin Hall angle by tuning the resistivity of Ta, reaching up to -35 ± 3%, the largest reported value for a pure metal.

Original languageEnglish
Article number060410(R)
Number of pages7
JournalPhysical Review B
Volume98
Issue number6
DOIs
Publication statusPublished - 1 Aug 2018

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