Using memristor state change behavior to identify faults in photovoltaic arrays

Jimson Mathew; Marco Ottavi; Yunfan Yang; Dhiraj K. Pradhan

doi:10.1109/DFT.2014.6962094

Using memristor state change behavior to identify faults in photovoltaic arrays

Jimson Mathew^*, Marco Ottavi, Yunfan Yang, Dhiraj K. Pradhan

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

5 Citations (Scopus)

Abstract

Memristor is an emerging non-volatile memory device that features smaller size and hybrid memristor/CMOS integration, which maximizes the advantages of high density and versatility. In this paper we utilize the memristor as weights and its state change behavior to capture some of the potential faults in a system. Photovoltaic arrays are taken as an example for the study. We will demonstrate that the state variations can be mapped into a timing which can be used as useful information for behavior of the system under measurement. Empirical studies are carried out using Spice based simulations to investigate into the impact of biasing and threshold voltages on timing behavior. Underpinning these studies, a relationship between input voltage and memristor state transition is proposed and extensively validated through further simulations to identify specific faulty behavior.

Original language	English
Title of host publication	Proceedings - IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	86-91
Number of pages	6
ISBN (Print)	9781479961559
DOIs	https://doi.org/10.1109/DFT.2014.6962094
Publication status	Published - 18 Nov 2014
Event	27th IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2014 - Amsterdam, United Kingdom Duration: 1 Oct 2014 → 3 Oct 2014

Conference

Conference	27th IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2014
Country/Territory	United Kingdom
City	Amsterdam
Period	1/10/14 → 3/10/14

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/DFT.2014.6962094

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Cite this

@inproceedings{b1b509892c9c4d2da280572227b78e30,

title = "Using memristor state change behavior to identify faults in photovoltaic arrays",

abstract = "Memristor is an emerging non-volatile memory device that features smaller size and hybrid memristor/CMOS integration, which maximizes the advantages of high density and versatility. In this paper we utilize the memristor as weights and its state change behavior to capture some of the potential faults in a system. Photovoltaic arrays are taken as an example for the study. We will demonstrate that the state variations can be mapped into a timing which can be used as useful information for behavior of the system under measurement. Empirical studies are carried out using Spice based simulations to investigate into the impact of biasing and threshold voltages on timing behavior. Underpinning these studies, a relationship between input voltage and memristor state transition is proposed and extensively validated through further simulations to identify specific faulty behavior.",

author = "Jimson Mathew and Marco Ottavi and Yunfan Yang and Pradhan, {Dhiraj K.}",

year = "2014",

month = nov,

day = "18",

doi = "10.1109/DFT.2014.6962094",

language = "English",

isbn = "9781479961559",

pages = "86--91",

booktitle = "Proceedings - IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "27th IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2014 ; Conference date: 01-10-2014 Through 03-10-2014",

}

Mathew, J, Ottavi, M, Yang, Y & Pradhan, DK 2014, Using memristor state change behavior to identify faults in photovoltaic arrays. in Proceedings - IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems., 6962094, Institute of Electrical and Electronics Engineers (IEEE), pp. 86-91, 27th IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2014, Amsterdam, United Kingdom, 1/10/14. https://doi.org/10.1109/DFT.2014.6962094

Using memristor state change behavior to identify faults in photovoltaic arrays. / Mathew, Jimson; Ottavi, Marco; Yang, Yunfan et al.
Proceedings - IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems. Institute of Electrical and Electronics Engineers (IEEE), 2014. p. 86-91 6962094.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Using memristor state change behavior to identify faults in photovoltaic arrays

AU - Mathew, Jimson

AU - Ottavi, Marco

AU - Yang, Yunfan

AU - Pradhan, Dhiraj K.

PY - 2014/11/18

Y1 - 2014/11/18

N2 - Memristor is an emerging non-volatile memory device that features smaller size and hybrid memristor/CMOS integration, which maximizes the advantages of high density and versatility. In this paper we utilize the memristor as weights and its state change behavior to capture some of the potential faults in a system. Photovoltaic arrays are taken as an example for the study. We will demonstrate that the state variations can be mapped into a timing which can be used as useful information for behavior of the system under measurement. Empirical studies are carried out using Spice based simulations to investigate into the impact of biasing and threshold voltages on timing behavior. Underpinning these studies, a relationship between input voltage and memristor state transition is proposed and extensively validated through further simulations to identify specific faulty behavior.

AB - Memristor is an emerging non-volatile memory device that features smaller size and hybrid memristor/CMOS integration, which maximizes the advantages of high density and versatility. In this paper we utilize the memristor as weights and its state change behavior to capture some of the potential faults in a system. Photovoltaic arrays are taken as an example for the study. We will demonstrate that the state variations can be mapped into a timing which can be used as useful information for behavior of the system under measurement. Empirical studies are carried out using Spice based simulations to investigate into the impact of biasing and threshold voltages on timing behavior. Underpinning these studies, a relationship between input voltage and memristor state transition is proposed and extensively validated through further simulations to identify specific faulty behavior.

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DO - 10.1109/DFT.2014.6962094

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:84914671504

SN - 9781479961559

SP - 86

EP - 91

BT - Proceedings - IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 27th IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2014

Y2 - 1 October 2014 through 3 October 2014

ER -

Using memristor state change behavior to identify faults in photovoltaic arrays

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Yield and reliability enhancement techniques for novel memory devices

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Using memristor state change behavior to identify faults in photovoltaic arrays

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Yield and reliability enhancement techniques for novel memory devices

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