Vacancy Type Defects After Post Growth Heat Treatment in SI Ga As: A Positron Study

JM Clayton, SG Usmar, MA Alam, DTJ Hurle, DJ Stirland

Research output: Contribution to journalArticle (Academic Journal)

Translated title of the contributionVacancy Type Defects After Post Growth Heat Treatment in SI Ga As: A Positron Study
Original languageEnglish
Pages (from-to)233 - 236
Number of pages3
JournalSemiconductor Science and Technology
Volume7
Publication statusPublished - 1992

Bibliographical note

Other: # Page no A233 to A236

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