Vacancy Type Defects After Post Growth Heat Treatment in SI Ga As:  A Positron Study

JM Clayton, SG Usmar, MA Alam, DTJ Hurle, DJ Stirland

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Translated title of the contribution	Vacancy Type Defects After Post Growth Heat Treatment in SI Ga As: A Positron Study
Original language	English
Pages (from-to)	233 - 236
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	7
Publication status	Published - 1992

Other: # Page no A233 to A236

Handle.net

@article{7cbd73b467bc46939399e19d151f23e1,

title = "Vacancy Type Defects After Post Growth Heat Treatment in SI Ga As: A Positron Study",

author = "JM Clayton and SG Usmar and MA Alam and DTJ Hurle and DJ Stirland",

note = "Other: # Page no A233 to A236",

year = "1992",

language = "English",

volume = "7",

pages = "233 -- 236",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing",

}

TY - JOUR

T1 - Vacancy Type Defects After Post Growth Heat Treatment in SI Ga As: A Positron Study

AU - Clayton, JM

AU - Usmar, SG

AU - Alam, MA

AU - Hurle, DTJ

AU - Stirland, DJ

N1 - Other: # Page no A233 to A236

PY - 1992

Y1 - 1992

M3 - Article (Academic Journal)

VL - 7

SP - 233

EP - 236

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

ER -