Vacancy type defects after post growth heat treatment in SI GaAs: a positron study

JM Clayton, SG Usmar, MA Alam, DTJ Hurle, DJ Stirland

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Translated title of the contributionVacancy type defects after post growth heat treatment in SI GaAs: a positron study
Original languageEnglish
Title of host publicationUnknown
Pages233 - 236
Number of pages3
Publication statusPublished - 1991

Bibliographical note

Conference Proceedings/Title of Journal: Defect Recognition in Semiconductors before and after Processing

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