Translated title of the contribution | Vacancy type defects after post growth heat treatment in SI GaAs: a positron study |
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Original language | English |
Title of host publication | Unknown |
Pages | 233 - 236 |
Number of pages | 3 |
Publication status | Published - 1991 |
Vacancy type defects after post growth heat treatment in SI GaAs: a positron study
JM Clayton, SG Usmar, MA Alam, DTJ Hurle, DJ Stirland
Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)