Vacancy type defects after post growth heat treatment in SI GaAs: a positron study

JM Clayton, SG Usmar, MA Alam, DTJ Hurle, DJ Stirland

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Translated title of the contribution	Vacancy type defects after post growth heat treatment in SI GaAs: a positron study
Original language	English
Pages (from-to)	233 - 236
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	7A
Publication status	Published - 1991

Cite this

@article{3398ccc7f1e94ced94d2f6b239984ee4,

title = "Vacancy type defects after post growth heat treatment in SI GaAs: a positron study",

author = "JM Clayton and SG Usmar and MA Alam and DTJ Hurle and DJ Stirland",

year = "1991",

language = "English",

volume = "7A",

pages = "233 -- 236",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing",

}