Translated title of the contribution | Vacancy type defects after post growth heat treatment in SI GaAs: a positron study |
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Original language | English |
Pages (from-to) | 233 - 236 |
Number of pages | 3 |
Journal | Semiconductor Science and Technology |
Volume | 7A |
Publication status | Published - 1991 |
Vacancy type defects after post growth heat treatment in SI GaAs: a positron study
JM Clayton, SG Usmar, MA Alam, DTJ Hurle, DJ Stirland
Research output: Contribution to journal › Article (Academic Journal) › peer-review