Vacancy type defects after post growth heat treatment in SI GaAs: a positron study

JM Clayton, SG Usmar, MA Alam, DTJ Hurle, DJ Stirland

Research output: Contribution to journalArticle (Academic Journal)

Translated title of the contributionVacancy type defects after post growth heat treatment in SI GaAs: a positron study
Original languageEnglish
Pages (from-to)233 - 236
Number of pages3
JournalSemiconductor Science and Technology
Volume7A
Publication statusPublished - 1991

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