Vacancy type defects after post growth heat treatment in SI GaAs: a positron study

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Translated title of the contribution	Vacancy type defects after post growth heat treatment in SI GaAs: a positron study
Original language	English
Title of host publication	Unknown
Pages	233 - 236
Number of pages	3
Publication status	Published - 1991

Conference Proceedings/Title of Journal: Defect Recognition in Semiconductors before and after Processing

Handle.net

@inproceedings{20ed778042b747c8ac67ce24efa4a7c2,

title = "Vacancy type defects after post growth heat treatment in SI GaAs: a positron study",

author = "JM Clayton and SG Usmar and MA Alam and DTJ Hurle and DJ Stirland",

note = "Conference Proceedings/Title of Journal: Defect Recognition in Semiconductors before and after Processing",

year = "1991",

language = "English",

isbn = "075031880",

pages = "233 -- 236",

booktitle = "Unknown",

}

TY - GEN

T1 - Vacancy type defects after post growth heat treatment in SI GaAs: a positron study

AU - Clayton, JM

AU - Usmar, SG

AU - Alam, MA

AU - Hurle, DTJ

AU - Stirland, DJ

N1 - Conference Proceedings/Title of Journal: Defect Recognition in Semiconductors before and after Processing

PY - 1991

Y1 - 1991

M3 - Conference Contribution (Conference Proceeding)

SN - 075031880

SP - 233

EP - 236

BT - Unknown

ER -