Vacancy Type Defects after Post Growth Quenching and Re-Annealing of SI GaAs

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Translated title of the contribution	Vacancy Type Defects after Post Growth Quenching and Re-Annealing of SI GaAs
Original language	English
Pages (from-to)	929 - 932
Number of pages	3
Journal	Mat Sci Forum
Volume	105-10
Publication status	Published - 1992

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@article{a4780f46cbe040c8a1edafd86d7e95fd,

title = "Vacancy Type Defects after Post Growth Quenching and Re-Annealing of SI GaAs",

author = "JM Clayton and HM Fretwell and SG Usmar and MA Alam and DTJ Hurle",

year = "1992",

language = "English",

volume = "105-10",

pages = "929 -- 932",

journal = "Mat Sci Forum",

issn = "1662-9752",

publisher = "Trans Tech Publications Ltd",

}