Variable range hopping mechanism and modeling of isolation leakage current in GaNbased high-electron-mobility transistors

Jiejie Zhu*, Yingcong Zhang, Michael J Uren, Siyu Liu, Pengfei Wang, Minhan Mi, Bin Hou, Ling Yang, Martin Kuball, Xiaohua Ma, Yue Hao

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

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