Wafer-scale GaN HEMT performance enhancement by diamond substrate integration

G. D. Via; J. G. Felbinger; J. Blevins; K. Chabak; G. Jessen; J. Gillespie; R. Fitch; A. Crespo; K. Sutherlin; B. Poling; S. Tetlak; R. Gilbert; T. Cooper; R. Baranyai; J. W. Pomeroy; M. Kuball; J. J. Maurer; A. Bar-Cohen

doi:10.1002/pssc.201300504

Wafer-scale GaN HEMT performance enhancement by diamond substrate integration

G. D. Via^*, J. G. Felbinger, J. Blevins, K. Chabak, G. Jessen, J. Gillespie, R. Fitch, A. Crespo, K. Sutherlin, B. Poling, S. Tetlak, R. Gilbert, T. Cooper, R. Baranyai, J. W. Pomeroy, M. Kuball, J. J. Maurer, A. Bar-Cohen

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

24 Citations (Scopus)

Abstract

A wafer-scale comparison of HEMTs fabricated on as-grown GaN/Si and HEMTs fabricated in parallel on epitaxial layers from the GaN/Si growth integrated with a diamond substrate are presented. Diamond, which offers the highest room-temperature thermal conductivity of any bulk material, is being evaluated as a solution for thermal limitations observed in GaN-based devices. This paper will present electrical and thermal data collected at the wafer scale demonstrating the improvement realized by integration of a high-thermal-conductivity substrate.

Original language	English
Pages (from-to)	871-874
Number of pages	4
Journal	physica status solidi (c)
Volume	11
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.201300504
Publication status	Published - 2014

Research Groups and Themes

CDTR

Keywords

Diamond substrate integration
GaN/diamond
Thermal resistance

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Via, G. D., Felbinger, J. G., Blevins, J., Chabak, K., Jessen, G., Gillespie, J., Fitch, R., Crespo, A., Sutherlin, K., Poling, B., Tetlak, S., Gilbert, R., Cooper, T., Baranyai, R., Pomeroy, J. W., Kuball, M., Maurer, J. J., & Bar-Cohen, A. (2014). Wafer-scale GaN HEMT performance enhancement by diamond substrate integration. physica status solidi (c), 11(3-4), 871-874. https://doi.org/10.1002/pssc.201300504

@article{89a918b7d7e14d69a645e9203e808e90,

title = "Wafer-scale GaN HEMT performance enhancement by diamond substrate integration",

abstract = "A wafer-scale comparison of HEMTs fabricated on as-grown GaN/Si and HEMTs fabricated in parallel on epitaxial layers from the GaN/Si growth integrated with a diamond substrate are presented. Diamond, which offers the highest room-temperature thermal conductivity of any bulk material, is being evaluated as a solution for thermal limitations observed in GaN-based devices. This paper will present electrical and thermal data collected at the wafer scale demonstrating the improvement realized by integration of a high-thermal-conductivity substrate.",

keywords = "Diamond substrate integration, GaN/diamond, Thermal resistance",

author = "Via, {G. D.} and Felbinger, {J. G.} and J. Blevins and K. Chabak and G. Jessen and J. Gillespie and R. Fitch and A. Crespo and K. Sutherlin and B. Poling and S. Tetlak and R. Gilbert and T. Cooper and R. Baranyai and Pomeroy, {J. W.} and M. Kuball and Maurer, {J. J.} and A. Bar-Cohen",

year = "2014",

doi = "10.1002/pssc.201300504",

language = "English",

volume = "11",

pages = "871--874",

journal = "physica status solidi (c)",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "3-4",

}

Via, GD, Felbinger, JG, Blevins, J, Chabak, K, Jessen, G, Gillespie, J, Fitch, R, Crespo, A, Sutherlin, K, Poling, B, Tetlak, S, Gilbert, R, Cooper, T, Baranyai, R, Pomeroy, JW , Kuball, M, Maurer, JJ & Bar-Cohen, A 2014, 'Wafer-scale GaN HEMT performance enhancement by diamond substrate integration', physica status solidi (c), vol. 11, no. 3-4, pp. 871-874. https://doi.org/10.1002/pssc.201300504

TY - JOUR

T1 - Wafer-scale GaN HEMT performance enhancement by diamond substrate integration

AU - Via, G. D.

AU - Felbinger, J. G.

AU - Blevins, J.

AU - Chabak, K.

AU - Jessen, G.

AU - Gillespie, J.

AU - Fitch, R.

AU - Crespo, A.

AU - Sutherlin, K.

AU - Poling, B.

AU - Tetlak, S.

AU - Gilbert, R.

AU - Cooper, T.

AU - Baranyai, R.

AU - Pomeroy, J. W.

AU - Kuball, M.

AU - Maurer, J. J.

AU - Bar-Cohen, A.

PY - 2014

Y1 - 2014

N2 - A wafer-scale comparison of HEMTs fabricated on as-grown GaN/Si and HEMTs fabricated in parallel on epitaxial layers from the GaN/Si growth integrated with a diamond substrate are presented. Diamond, which offers the highest room-temperature thermal conductivity of any bulk material, is being evaluated as a solution for thermal limitations observed in GaN-based devices. This paper will present electrical and thermal data collected at the wafer scale demonstrating the improvement realized by integration of a high-thermal-conductivity substrate.

AB - A wafer-scale comparison of HEMTs fabricated on as-grown GaN/Si and HEMTs fabricated in parallel on epitaxial layers from the GaN/Si growth integrated with a diamond substrate are presented. Diamond, which offers the highest room-temperature thermal conductivity of any bulk material, is being evaluated as a solution for thermal limitations observed in GaN-based devices. This paper will present electrical and thermal data collected at the wafer scale demonstrating the improvement realized by integration of a high-thermal-conductivity substrate.

KW - Diamond substrate integration

KW - GaN/diamond

KW - Thermal resistance

UR - http://www.scopus.com/inward/record.url?scp=84898545430&partnerID=8YFLogxK

U2 - 10.1002/pssc.201300504

DO - 10.1002/pssc.201300504

M3 - Article (Academic Journal)

AN - SCOPUS:84898545430

SN - 1862-6351

VL - 11

SP - 871

EP - 874

JO - physica status solidi (c)

JF - physica status solidi (c)

IS - 3-4

ER -

Wafer-scale GaN HEMT performance enhancement by diamond substrate integration

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