Wafer-scale GaN HEMT performance enhancement by diamond substrate integration

G. D. Via*, J. G. Felbinger, J. Blevins, K. Chabak, G. Jessen, J. Gillespie, R. Fitch, A. Crespo, K. Sutherlin, B. Poling, S. Tetlak, R. Gilbert, T. Cooper, R. Baranyai, J. W. Pomeroy, M. Kuball, J. J. Maurer, A. Bar-Cohen

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)

17 Citations (Scopus)


A wafer-scale comparison of HEMTs fabricated on as-grown GaN/Si and HEMTs fabricated in parallel on epitaxial layers from the GaN/Si growth integrated with a diamond substrate are presented. Diamond, which offers the highest room-temperature thermal conductivity of any bulk material, is being evaluated as a solution for thermal limitations observed in GaN-based devices. This paper will present electrical and thermal data collected at the wafer scale demonstrating the improvement realized by integration of a high-thermal-conductivity substrate.

Original languageEnglish
Pages (from-to)871-874
Number of pages4
Journalphysica status solidi (c)
Issue number3-4
Publication statusPublished - 2014

Structured keywords

  • CDTR


  • Diamond substrate integration
  • GaN/diamond
  • Thermal resistance

Fingerprint Dive into the research topics of 'Wafer-scale GaN HEMT performance enhancement by diamond substrate integration'. Together they form a unique fingerprint.

  • Cite this

    Via, G. D., Felbinger, J. G., Blevins, J., Chabak, K., Jessen, G., Gillespie, J., Fitch, R., Crespo, A., Sutherlin, K., Poling, B., Tetlak, S., Gilbert, R., Cooper, T., Baranyai, R., Pomeroy, J. W., Kuball, M., Maurer, J. J., & Bar-Cohen, A. (2014). Wafer-scale GaN HEMT performance enhancement by diamond substrate integration. physica status solidi (c), 11(3-4), 871-874. https://doi.org/10.1002/pssc.201300504