Well thickness dependence of gain in 1.3 micron InGaNAs quantum wells

JM Rorison, JCL Yong, IH White

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Translated title of the contributionWell thickness dependence of gain in 1.3 micron InGaNAs quantum wells
Original languageEnglish
Title of host publicationUK Annual Nitride Meeting, Bristol, UK
Publication statusPublished - Sep 2000

Cite this

Rorison, JM., Yong, JCL., & White, IH. (2000). Well thickness dependence of gain in 1.3 micron InGaNAs quantum wells. In UK Annual Nitride Meeting, Bristol, UK