| Translated title of the contribution | Well thickness dependence of gain in 1.3 micron InGaNAs quantum wells |
|---|---|
| Original language | English |
| Title of host publication | UK Annual Nitride Meeting, Bristol, UK |
| Publication status | Published - Sept 2000 |
Well thickness dependence of gain in 1.3 micron InGaNAs quantum wells
JM Rorison, JCL Yong, IH White
Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)