TY - JOUR
T1 - Wire-bonded through-silicon vias with low capacitive substrate coupling
AU - A C, Fischer
AU - M, Grange
AU - N, Roxhed
AU - R, Weerasekera
AU - Pamunuwa, D
AU - G, Stemme
AU - F, Niklaus
N1 - Publisher: IOP
PY - 2011/7/26
Y1 - 2011/7/26
N2 - Three-dimensional integration of electronics and/or MEMS-based transducers is an emerging technology that vertically interconnects stacked dies with through-silicon vias (TSVs). They enable the realization of circuits with shorter signal path lengths, smaller packages and lower parasitic capacitances, which results in higher performance and lower costs. This paper presents a novel technique for fabricating TSVs from bonded gold wires. The wires are embedded in a polymer, which acts both as an electrical insulator, resulting in low capacitive coupling toward the substrate and as a buffer for thermo-mechanical stress.
AB - Three-dimensional integration of electronics and/or MEMS-based transducers is an emerging technology that vertically interconnects stacked dies with through-silicon vias (TSVs). They enable the realization of circuits with shorter signal path lengths, smaller packages and lower parasitic capacitances, which results in higher performance and lower costs. This paper presents a novel technique for fabricating TSVs from bonded gold wires. The wires are embedded in a polymer, which acts both as an electrical insulator, resulting in low capacitive coupling toward the substrate and as a buffer for thermo-mechanical stress.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-79961219588&partnerID=8YFLogxK
U2 - 10.1088/0960-1317/21/8/085035
DO - 10.1088/0960-1317/21/8/085035
M3 - Article (Academic Journal)
VL - 21
SP - 1
EP - 8
JO - Journal of Micromechanics and Microengineering
JF - Journal of Micromechanics and Microengineering
SN - 0960-1317
IS - 8
ER -