Wire-bonded through-silicon vias with low capacitive substrate coupling

Fischer A C, Grange M, Roxhed N, Weerasekera R, D Pamunuwa, Stemme G, Niklaus F

Research output: Contribution to journalArticle (Academic Journal)peer-review

15 Citations (Scopus)

Abstract

Three-dimensional integration of electronics and/or MEMS-based transducers is an emerging technology that vertically interconnects stacked dies with through-silicon vias (TSVs). They enable the realization of circuits with shorter signal path lengths, smaller packages and lower parasitic capacitances, which results in higher performance and lower costs. This paper presents a novel technique for fabricating TSVs from bonded gold wires. The wires are embedded in a polymer, which acts both as an electrical insulator, resulting in low capacitive coupling toward the substrate and as a buffer for thermo-mechanical stress.
Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalJournal of Micromechanics and Microengineering
Volume21
Issue number8
DOIs
Publication statusPublished - 26 Jul 2011

Bibliographical note

Publisher: IOP

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