Research Outputs
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Search results
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Improvement of Electron Transport Property and On-Resistance in Normally-Off Al2O3/AlGaN/GaN MOS-HEMTs Using Post-Etch Surface Treatment
Zhu, J., Jing, S., Ma, X., Liu, S., Wang, P., Zhang, Y., Zhu, Q. Z., Mi, M., Yang, L., Kuball, M. H. H. & Hao, Y., 20 Jul 2020, In: IEEE Transactions on Electron Devices. 67, 9, p. 3541 - 3547 7 p.Research output: Contribution to journal › Article (Academic Journal) › peer-review
Open AccessFile18 Citations (Scopus)297 Downloads (Pure) -
Interface property and band offset investigation of GaN based MOS heterostructures with diffusion-controlled interface oxidation technique
Zhu, J., Zhang, Y., Ma, X., Liu, S., Jing, S., Zhu, Q. Z., Mi, M., Hou, B., Yang, L., Uren, M. J., Kuball, M. H. H. & Hao, Y., 19 May 2020, In: Semiconductor Science and Technology. 35, 6, 7 p., 065017.Research output: Contribution to journal › Article (Academic Journal) › peer-review
3 Citations (Scopus) -
Isotopically Enhanced Thermal Conductivity in Few-Layer Hexagonal Boron Nitride: Implications for Thermal Management
Mercado, E. J. M., Yuan, C., Zhou, Y., Li, J., Edgar, J. H. & Kuball, M. H. H., 24 Dec 2020, In: ACS Applied Nano Materials. 3, 12, 9 p.Research output: Contribution to journal › Article (Academic Journal) › peer-review
Open AccessFile19 Citations (Scopus)123 Downloads (Pure) -
Submicron Resolution Hyperspectral Quantum Rod Thermal Imaging of Microelectronic Devices
Oner, B., Pomeroy, J. W. & Kuball, M. H. H., 28 Jan 2020, In: ACS Applied Electronic Materials. 2, 1, p. 93-102 10 p.Research output: Contribution to journal › Article (Academic Journal) › peer-review
Open AccessFile14 Citations (Scopus)180 Downloads (Pure) -
The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs
Yang, F., Dalcanale, S., Gajda, M., Karboyan, S., Uren, M. J. & Kuball, M. H. H., 10 Feb 2020, In: IEEE Transactions on Electron Devices. 67, 3Research output: Contribution to journal › Article (Academic Journal) › peer-review
30 Citations (Scopus) -
Time Resolved Hyperspectral Quantum Rod Thermography of Microelectronic Devices: Temperature Transients in a GaN HEMT
Öner, B., Pomeroy, J. W. & Kuball, M., 23 Apr 2020, (E-pub ahead of print) In: IEEE Electron Device Letters.Research output: Contribution to journal › Article (Academic Journal) › peer-review
Open AccessFile6 Citations (Scopus)237 Downloads (Pure) -
Variable range hopping mechanism and modeling of isolation leakage current in GaNbased high-electron-mobility transistors
Zhu, J., Zhang, Y., Uren, M. J., Liu, S., Wang, P., Mi, M., Hou, B., Yang, L., Kuball, M., Ma, X. & Hao, Y., 1 Jun 2020, (E-pub ahead of print) In: Applied Physics Letters. 116, 22, 5 p., 222101 (2020).Research output: Contribution to journal › Article (Academic Journal) › peer-review
Open AccessFile449 Downloads (Pure) -
Annealing effect of surface-activated bonded diamond/Si interface
Zhou, Y., Gucmann, F., Manikant, M., Pomeroy, J. & Kuball, M., 13 Feb 2019, (Accepted/In press) In: Diamond and Related Materials.Research output: Contribution to journal › Article (Academic Journal) › peer-review
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Atomic layer deposited α-Ga2O3 solar-blind photodetectors
Singh, M., Karboyan, S. & Kuball, M. H. H., 6 Sept 2019, In: Journal of Physics D: Applied Physics. 52, 47Research output: Contribution to journal › Article (Academic Journal) › peer-review
44 Citations (Scopus) -
Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD
Chauhan, P., Hasenöhrl , S., Dobročka, E., Chauvat, M. P., Minj, A., Gucmann, F., Vančo, Ľ., Kováč, Jr., J., Kret, S., Ruterana, P., Kuball, M., Šiffalovič, P. & Kuzmík, J., 14 Mar 2019, In: Journal of Applied Physics. 125, 10, 11 p., 105304 .Research output: Contribution to journal › Article (Academic Journal) › peer-review
Open AccessFile14 Citations (Scopus)391 Downloads (Pure) -
High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation
Kabouche, R., Pecheux, R., Harrouche, K., Okada, E., Medjdoub, F., Derluyn, J., Degroote, S., Germain, M., Gucmann, F., Middleton, C. J., Pomeroy, J. W. & Kuball, M. H. H., 11 Aug 2019, (E-pub ahead of print) In: International Journal of High Speed Electronics and Systems. 28, 01/02, 1940003 (2019) .Research output: Contribution to journal › Article (Academic Journal) › peer-review
Open AccessFile3 Citations (Scopus)139 Downloads (Pure) -
Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices
Middleton, C., Chandrasekar, H., Singh, M., Pomeroy, J. W., Uren, M. J., Francis, D. & Kuball, M., 1 Feb 2019, In: Applied Physics Express. 12, 2, 024003.Research output: Contribution to journal › Article (Academic Journal) › peer-review
14 Citations (Scopus) -
Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers
Singh, M., Karboyan, S., Uren, M. J., Lee, K. B., Zaidi, Z., Houston, P. A. & Kuball, M., 1 Apr 2019, In: Microelectronics Reliability. 95, p. 81-86 6 p.Research output: Contribution to journal › Article (Academic Journal) › peer-review
5 Citations (Scopus) -
Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration
Yuan, C., Li, J., Lindsay, L., Cherns, D., Pomeroy, J. W., Liu, S., Edgar, J. H. & Kuball, M., 2 May 2019, In: Communications Physics. 2, 8 p., 43 (2019).Research output: Contribution to journal › Article (Academic Journal) › peer-review
Open AccessFile172 Citations (Scopus)415 Downloads (Pure) -
Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene
Mercado, E. J. M., Zhou, Y., Xie, Y., Zhao, Q., Cai, H., Chen, B., Jie, W., Tongay, S., Wang, T. & Kuball, M. H. H., 25 Oct 2019, (E-pub ahead of print) In: ACS Omega. 9 p.Research output: Contribution to journal › Article (Academic Journal) › peer-review
Open AccessFile21 Citations (Scopus)334 Downloads (Pure) -
Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology
Chandrasekar, H., Uren, M., Casbon, M. A., Hirshy, H., Eblabla, A., Elgaid, K., Pomeroy, J., Tasker, P. & Kuball, M., 1 Apr 2019, In: IEEE Transactions on Electron Devices. 66, 4, p. 1681-1687 7 p., 8641454.Research output: Contribution to journal › Article (Academic Journal) › peer-review
Open AccessFile25 Citations (Scopus)258 Downloads (Pure) -
Raman Thermography of Peak Channel Temperature in β-Ga2O3 MOSFETs
Pomeroy, J. W., Middleton, C., Singh, M., Dalcanale, S., Uren, M. J., Wong, M. H., Sasaki, K., Kuramata, A., Yamakoshi, S., Higashiwaki, M. & Kuball, M., 1 Feb 2019, In: IEEE Electron Device Letters. 40, 2, p. 189-192 4 p., 8581472.Research output: Contribution to journal › Article (Academic Journal) › peer-review
62 Citations (Scopus) -
Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes
Rackauskas, B., Uren, M., Kachi, T. & Kuball, M., Apr 2019, In: Microelectronics Reliability. 95, p. 48-51 4 p.Research output: Contribution to journal › Article (Academic Journal) › peer-review
Open AccessFile11 Citations (Scopus)350 Downloads (Pure) -
Room-temperature direct bonding of diamond and Al
Liang, J., Yamajo, S., Kuball, M. & Shigekawa, N., 15 Jan 2019, In: Scripta Materialia. 159, p. 58-61 4 p.Research output: Contribution to journal › Article (Academic Journal) › peer-review
23 Citations (Scopus) -
Self-Heating Characterization of β-Ga2O3 Thin-Channel MOSFETs by Pulsed I-V and Raman Nanothermography
Blumenschein, N. A., Moser, N. A., Heller, E. R., Miller, N. C., Green, A. J., Popp, A., Crespo, A., Leedy, K., Lindquist, M., Moule, T., Dalcanale, S., Mercado, E., Singh, M., Pomeroy, J. W., Kuball, M., Wagner, G., Paskova, T., Muth, J. F., Chabak, K. D. & Jessen, G. H., 22 Nov 2019, In: IEEE Transactions on Electron Devices. 67, 1, p. 204-211 8 p.Research output: Contribution to journal › Article (Academic Journal) › peer-review
Open AccessFile23 Citations (Scopus)216 Downloads (Pure) -
Thermal transport in Superlattice Castellated Field Effect Transistors
Middleton, C., Dalcanale, S., Uren, M., Pomeroy, J., Uren, M. J., Chang, J., Parke, J., Wathuthanthri, I., Nagamatsu, K., Salaru, S. & Kuball, M., 18 Jul 2019, In: IEEE Electron Device Letters. 40, 9, p. 1374-1377 4 p.Research output: Contribution to journal › Article (Academic Journal) › peer-review
Open AccessFile455 Downloads (Pure) -
Above bandgap thermoreflectance for non-invasive thermal characterization of GaN-based wafers
Yuan, C., Pomeroy, J. W. & Kuball, M., 4 Sept 2018, In: Applied Physics Letters. 113, 10, 6 p., 102101.Research output: Contribution to journal › Article (Academic Journal) › peer-review
Open AccessFile37 Citations (Scopus)443 Downloads (Pure) -
Buffer Induced Current-Collapse in GaN HEMTs on Highly Resistive Si Substrates
Chandrasekar, H., Uren, M. J., Eblabla, A., Hirshy, H., Casbon, M. A., Tasker, P. J., Elgaid, K. & Kuball, M., Oct 2018, In: IEEE Electron Device Letters. 39, 10, p. 1556-1559 4 p.Research output: Contribution to journal › Article (Academic Journal) › peer-review
Open AccessFile32 Citations (Scopus)431 Downloads (Pure) -
Consumer Search Costs and Preferences on the Internet
Jolivet, G. & Turon, H., 7 May 2018, In: Review of Economic Studies. 86, 3, p. 1258-1300 rdy023.Research output: Contribution to journal › Article (Academic Journal) › peer-review
Open AccessFile17 Citations (Scopus)375 Downloads (Pure) -
Determination of the self-compensation ratio of carbon in AlGaN for HEMTs
Rackauskas, B., Uren, M. J., Stoffels, S., Zhao, M., Decoutere, S. & Kuball, M., 1 May 2018, In: IEEE Transactions on Electron Devices. 65, 5, p. 1838-1842 5 p.Research output: Contribution to journal › Article (Academic Journal) › peer-review
Open AccessFile37 Citations (Scopus)445 Downloads (Pure)