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• Thermal characterization of high voltage GaN-on-Si Schottky Barrier Diodes (SBD) for designing an on-chip thermal shutdown circuit for a power HEMT

  Risbud, D., Pedrotti, K., Power, M., Pomeroy, J. & Kuball, M., 2015, Proceedings of WiPDA.

  Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

  10 Citations (Scopus)

  71 Downloads (Pure)

• Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires

  Anaya Calvo, J., Rossi, S., Alomari, M., Kohn, E., Tóth, L., Pécz, B. & Kuball, M. H. H., 1 Jun 2015, In: Applied Physics Letters. 106, 22, 5 p., 223101.

  Research output: Contribution to journal › Article (Academic Journal) › peer-review

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  57 Citations (Scopus)

  589 Downloads (Pure)

• Thermal stress modelling of diamond on GaN/III-Nitride membranes

  Cuenca, J. A., Smith, M. D., Field, D. E., Massabuau, F.C.-P., Mandal, S., Pomeroy, J. W., Wallis, D. J., Oliver, R. A., Thayne, I., Kuball, M. & Williams, O. A., 30 Apr 2015, In: Carbon. 174, p. 647-661 15 p.

  Research output: Contribution to journal › Article (Academic Journal) › peer-review

  Open Access

  42 Citations (Scopus)

• Buffer Transport Mechanisms in Intentionally Carbon Doped GaN Heterojunction Field Effect Transistors

  Uren, M. J., Caesar, M., Gajda, M. & Kuball, M., 30 Jun 2014, In: Applied Physics Letters. 104, p. 263505 4 p.

  Research output: Contribution to journal › Article (Academic Journal) › peer-review

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  100 Citations (Scopus)

  946 Downloads (Pure)

• Contactless thermal boundary resistance measurement of GaN-on-diamond wafers

  Pomeroy, J. W., Simon, R. B., Sun, H., Francis, D., Faili, F., Twitchen, D. J. & Kuball, M., 1 Oct 2014, In: IEEE Electron Device Letters. 35, 10, p. 1007-1009 3 p., 6892957.

  Research output: Contribution to journal › Article (Academic Journal) › peer-review

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  58 Citations (Scopus)

  702 Downloads (Pure)

• Diamond micro-Raman thermometers for accurate gate temperature measurements

  Simon, R. B., Pomeroy, J. W. & Kuball, M. H. H., May 2014, In: Applied Physics Letters. 104, 21, 4 p., 213503.

  Research output: Contribution to journal › Article (Academic Journal) › peer-review

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  33 Citations (Scopus)

  490 Downloads (Pure)

• Impact of buffer layers on thermal properties of AlGaN/GaN-on-SiC high electron mobility transistors (HEMTs)

  Power, M., Pomeroy, J., Anaya Calvo, J., Otoki, Y., Tanaka, T., Wada, J., Kuzuhara, M., Jantz, W., Souzis, A. & Kuball, M., 15 Jun 2014, Extended Abstracts of WOCSDICE-EXMATEC-2014, Delphi, Greece. p. 49-50 2 p.

  Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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  120 Downloads (Pure)

• Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation

  Sun, H., Montes Bajo, M., Uren, M. J. & Kuball, M. H. H., Dec 2014, In: Microelectronics Reliability. 54, 12, p. 2650-2655 6 p.

  Research output: Contribution to journal › Article (Academic Journal) › peer-review

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  11 Citations (Scopus)

  785 Downloads (Pure)

• Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

  Uren, M. J., Silvestri, M., Caesar, M., Hurkx, G., Croon, J., Šonský, J. & Kuball, M., Mar 2014, In: IEEE Electron Device Letters. 35, 3, p. 327-329 3 p.

  Research output: Contribution to journal › Article (Academic Journal) › peer-review

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  121 Citations (Scopus)

  1377 Downloads (Pure)

• Investigation of the GaN-on-GaAs interface for vertical power device applications

  Moereke, J., Uren, M. J., Novikov, S. V., Foxon, C. T., Hosseini Vajargah, S., Wallis, D. J., Humphreys, C. J., Haigh, S. J., Al-Khalidi, A., Wasige, E., Thayne, I. & Kuball, M. H. H., 7 Jul 2014, In: Journal of Applied Physics. 116, 1, p. 1 - 6 6 p., 014502.

  Research output: Contribution to journal › Article (Academic Journal) › peer-review

  10 Citations (Scopus)

• Liquid crystal electrography: electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors

  Moereke, J., Hodges, C. J., Mears, L. L. E., Uren, M. J., Richardson, R. M. & Kuball, M. H. H., May 2014, In: Microelectronics Reliability. 54, 5, p. 921-925 5 p.

  Research output: Contribution to journal › Article (Academic Journal) › peer-review

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  4 Citations (Scopus)

  420 Downloads (Pure)

• Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

  Pomeroy, J. W., Bernardoni, M., Dumka, D., Fanning, D. & Kuball, M., 2014, In: Applied Physics Letters. 104, 4 p., 083513.

  Research output: Contribution to journal › Article (Academic Journal) › peer-review

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  175 Citations (Scopus)

  1223 Downloads (Pure)

• Need for Defects in Floating-Buffer AlGaN/GaN HEMTs

  Uren, M. J., Silvestri, M., Caesar, M., Pomeroy, J. W., Hurkx, G., Croon, J., Šonský, J. & Kuball, M., 19 May 2014, Proceedings of 2014 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH): May 19th - 22nd 2014, Denver, Colorado, USA. p. 317-319 3 p. 16.2

  Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

  179 Downloads (Pure)

• Novel thermal management and its analysis in GaN electronics

  Kuball, M., Calvo, J. A., Simon, R. B. & Pomeroy, J. W., 25 Mar 2014, 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014. Institute of Electrical and Electronics Engineers (IEEE), p. 920-922 3 p. 7067578

  Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

  1 Citation (Scopus)

• Optimizing GaN-on-diamond transistor geometry for maximum output power

  Pomeroy, J. W. & Kuball, M., 5 Dec 2014, Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. Institute of Electrical and Electronics Engineers (IEEE), 6978572

  Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

  10 Citations (Scopus)

• Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

  Hodges, C., Pomeroy, J. & Kuball, M., 14 Feb 2014, In: Journal of Applied Physics. 115, 6, 5 p., 064504.

  Research output: Contribution to journal › Article (Academic Journal) › peer-review

  15 Citations (Scopus)

  44 Downloads (Pure)

• Thermal properties of AlGaN/GaN high electron mobility transistors on 4H and 6H SiC substrates

  Killat, N., Pomeroy, J. W., Jimenez, J. L. & Kuball, M. H. H., 9 Dec 2014, In: physica status solidi (a). 211, 12, p. 2844-2847 4 p.

  Research output: Contribution to journal › Article (Academic Journal) › peer-review

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  10 Citations (Scopus)

  466 Downloads (Pure)

• Time evolution of off-state degradation of AlGaN/GaN high electron-mobility transistors

  Montes Bajo, M., Sun, H., Uren, M. J. & Kuball, M. H. H., 2014, In: Applied Physics Letters. 104, 22, 5 p., 223506.

  Research output: Contribution to journal › Article (Academic Journal) › peer-review

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  23 Citations (Scopus)

  569 Downloads (Pure)

• Wafer-scale GaN HEMT performance enhancement by diamond substrate integration

  Via, G. D., Felbinger, J. G., Blevins, J., Chabak, K., Jessen, G., Gillespie, J., Fitch, R., Crespo, A., Sutherlin, K., Poling, B., Tetlak, S., Gilbert, R., Cooper, T., Baranyai, R., Pomeroy, J. W., Kuball, M., Maurer, J. J. & Bar-Cohen, A., 2014, In: physica status solidi (c). 11, 3-4, p. 871-874 4 p.

  Research output: Contribution to journal › Article (Academic Journal) › peer-review

  26 Citations (Scopus)

• Achieving the best thermal performance for GaN-on-diamond

  Pomeroy, J., Bernardoni, M., Sarua, A., Manoi, A., Dumka, D. C., Fanning, D. M. & Kuball, M., 8 Nov 2013, Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. 6659210

  Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

  53 Citations (Scopus)

• AlGaN/GaN field effect transistors for power electronics: Effect of finite GaN layer thickness on thermal characteristics

  Hodges, C., Anaya Calvo, J., Stoffels, S., Marcon, D. & Kuball, M., 12 Nov 2013, In: Applied Physics Letters. 103, 20, 4 p., 202108.

  Research output: Contribution to journal › Article (Academic Journal) › peer-review

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  21 Citations (Scopus)

  703 Downloads (Pure)

• Analysis of strained surface layers of ZnO single crystals after irradiation with intense femtosecond laser pulses

  Schneider, A., Wolverson, D., Sebald, K., Hodges, C. J., Kuball, M. H. H. & Voss, T., May 2013, In: Applied Physics Letters.

  Research output: Contribution to journal › Article (Academic Journal) › peer-review

  2 Citations (Scopus)

  4 Downloads (Pure)

• Electrical and thermal performance of AlGaN/GaN HEMTs on diamond substrate for RF applications

  Dumka, D. C., Chou, T. M., Jimenez, J. L., Fanning, D. M., Francis, D., Faili, F., Ejeckam, F., Bernardoni, M., Pomeroy, J. W. & Kuball, M., 8 Nov 2013, Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. 6659225

  Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

  68 Citations (Scopus)

• GaN Buffer Design: Electrical Characterization and Prediction of the Effect of Deep Level Centers in GaN/AIGaN HEMTs

  Silvestri, M., Uren, M. J., Marcon, D. & Kuball, M., 2013, Proceedings of 2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH): May 13th - 16th 2013, New Orleans, Louisiana, USA. CS Mantech, p. 195-197 3 p.

  Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

  2 Citations (Scopus)

  145 Downloads (Pure)

• Impact ionisation electroluminescence in planar GaAs-based heterostructure Gunn diodes: Spatial distribution and impact of doping nonuniformities

  Montes Bajo, M., Dunn, G., Stephen, A., Khalid, A., Cumming, D. R. S., Oxley, C. H., Glover, J. & Kuball, M. H. H., 7 Apr 2013, In: Journal of Applied Physics. 113, 12, 6 p., 124505.

  Research output: Contribution to journal › Article (Academic Journal) › peer-review

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  12 Citations (Scopus)

  450 Downloads (Pure)